Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Long Cheng,Mei-Yun Zhang,Yi Li,Ya-Xiong Zhou,Zhuo-Rui Wang,Si-Yu Hu,Shi-Bing Long,Ming Liu,Xiang-Shui Miao
DOI: https://doi.org/10.1088/1361-6463/aa9646
2017-01-01
Abstract:Memristive stateful logic has emerged as a promising next-generation in-memory computing paradigm to address escalating computing-performance pressures in traditional von Neumann architecture. Here, we present a nonvolatile reprogrammable logic method that can process data between different rows and columns in a memristive crossbar array based on material implication (IMP) logic. Arbitrary Boolean logic can be executed with a reprogrammable cell containing four memristors in a crossbar array. In the fabricated Ti/HfO2/W memristive array, some fundamental functions, such as universal NAND logic and data transfer, were experimentally implemented. Moreover, using eight memristors in a 2 x 4 array, a one-bit full adder was theoretically designed and verified by simulation to exhibit the feasibility of our method to accomplish complex computing tasks. In addition, some critical logic-related performances were further discussed, such as the flexibility of data processing, cascading problem and bit error rate. Such a method could be a step forward in developing IMP-based memristive nonvolatile logic for large-scale in-memory computing architecture.
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