Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation

Si-Yu Hu,Yi Li,Long Cheng,Zhuo-Rui Wang,Ting-Chang Chang,Simon M. Sze,Xiang-shui Miao
DOI: https://doi.org/10.1109/led.2018.2886364
IF: 4.8157
2019-02-01
IEEE Electron Device Letters
Abstract:In-memory computing based on memristive logic is considered as a prospective non von Neumann computing paradigm. In this letter, we systematically analyze the four-variable logic method and map it into the operation of two anti-serial complementary memristors in the crossbar array architecture. Arbitrary Boolean logic can be implemented within three cycles with the experimental evidence of reconfigurable NAND, NOR, and XOR logic using Pt/HfO2/TiN devices. Taking advantage of the functional flexibility, a parallel 1-bit full adder that can be realized in 8 cycles within a $\textsf {4}\times \textsf {3}$ array has been designed and verified in simulation.
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