Abstract:Reconfigurable logic‐in‐memory device, albeit a promising hardware platform for constructing parallel computing architectures, still suffers from high power‐consumption and low area‐efficiency arising from the circuit redundancy in silicon (Si) based technical path. 2D materials are identified as potential building blocks to significantly reduce the circuit footprints with outstanding power‐efficiency, owing to their atomically thin nature and unique electronic properties. However, the present 2D logic devices are primarily based on single channel materials with homogeneous transport polarities, limiting the device reconfigurability for multi‐functional applications. Here, 2D p–n junction based dual‐gate Gaussian‐type transistors for simplified reconfigurable logic circuits are reported. All fundamental Boolean logic operators are implemented in a single device with electrically driven reconfigurability, giving rise to an ultra‐low transistor consumption down to 13% of the traditional circuits. The device is also demonstrated as a reliable image processing unit for various computing tasks (pixel processing, comparing, and ciphering) by executing the corresponding logic operations. Moreover, in situ memory of the Boolean logics is achieved by engineering the dielectric properties of the transistor without compromising its reconfigurability. These findings provide a potential approach to achieving reconfigurable logic‐in‐memory operations at the hardware level, with significant implications for the advancement of parallel computing.

Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits

A Complementary Resistive Switch-based Crossbar Array Adder

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation

Nonvolatile Logic and in Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

Fast and Reconfigurable Logic Synthesis in Memristor Crossbar Array

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing

Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

DRAM-based reconfigurable logic

Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM)

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

Laser writing of memristive logic gates and crossbar arrays

Reconfigurable Logic Operation Scheme Based on Gate-Tunable CBRAM

Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

Logic Computing with Stateful Neural Networks of Resistive Switches

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Complementary Switching in 3D Resistive Memory Array

Multi-bit Nonvolatile Logic Implemented with Metal-Oxide Based Resistive Switching Device