Multi-bit Nonvolatile Logic Implemented with Metal-Oxide Based Resistive Switching Device

Bin Gao,Bing Chen,Feifei Zhang,Peng Huang,Lifeng Liu,Xiaoyan Liu,Jinfeng Kang
DOI: https://doi.org/10.1016/j.ssc.2015.01.003
IF: 1.934
2015-01-01
Solid State Communications
Abstract:A material-oriented methodology based on the crystal defect theory is proposed to design the hafnium oxide based multi-bit nonvolatile logic devices (NLD). The designed devices are demonstrated to exhibit both multi-bit computing and self-data storage functions. Innovative operation schemes are developed to achieve the functions of computing and data storage on the NLD. A two-bit nonvolatile adder is demonstrated based on the NLD, indicating the potential application of the designed NLD for complex functions and higher density integration in a simple system.
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