Abstract:Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

An In-memory Highly Reconfigurable Logic Circuit Based on Diode-assisted Enhanced Magnetoresistance Device

Large Magnetoresistance and 15 Boolean Logic Functions Based on a ZnCoO Film and Diode Combined Device

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Magnetic Field Controlled Hybrid Semiconductor and Resistive Switching Device for Non-Volatile Memory Applications

Magnetic Domain-Wall Racetrack Memory-Based Nonvolatile Logic for Low-Power Computing and Fast Run-Time-Reconfiguration.

Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Nonvolatile magnetic half adder combined with memory writing

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Speed and Reliability of Nanomagnetic Logic Technology

Stateful Reconfigurable Logic Via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

Partial Spin Absorption Induced Magnetization Switching and Its Voltage-Assisted Improvement in an Asymmetrical All Spin Logic Device at the Mesoscopic Scale

Anomalous Thermal-Assisted Spin-Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory

Boolean Logic Operations Based on Four-Terminal Magnetic Tunnel Junction for Computing in Memory

An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire Via Local Gating