Silicon Based Nonvolatile Magnetic Memristor.

C. Xiong,X. Zhang,Z. Luo,J. Wang,J. Chen,Z. Guo

DOI: https://doi.org/10.1109/intmag.2015.7157551

2015-01-01

Abstract:This work proposes a new kind of nonvolatile magnetic storage by combing Hall device and memristor, which has a good performance in magnetic signal storage and has a potential for magnetic logic calculation.

What problem does this paper attempt to address?

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Pengtao Li,Ziyang Zhang,Zijian Wang,Guobin Zhang,Shengpeng Xing,Zhen Wang,Xuemeng Fan,Zhejia Zhang,Qi Luo,Yishu Zhang

DOI: https://doi.org/10.1109/icicdt63592.2024.10717633

2024-01-01

Abstract:The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching their limits, making next-generation solutions crucial. In this letter, we explore dual-layer oxide memristors of $\text{SiN}_{X}$ and ZnO for applications in volatile and non-volatile resistive switching memory. We demonstrated the reversible transition between volatile and non-volatile behaviors by controlling the current compliance. In the non-volatile state, the device exhibits low set and reset voltages of 0.23 V and -0.24 V, respectively. Finally, we provided a mechanistic explanation consistent with dual-layer oxide memristors and conducted a fitting of the conduction mechanism.
Magnetic Field Controlled Hybrid Semiconductor and Resistive Switching Device for Non-Volatile Memory Applications

Chengyue Xiong,Ziyao Lu,Siqi Yin,Hongming Mou,Xiaozhong Zhang

DOI: https://doi.org/10.1063/1.5063734

IF: 1.697

2019-01-01

AIP Advances

Abstract:A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing the device configuration, the storage can be controlled by magnetic fields in different directions. The parameters of the semiconductors and the resistive switching units are experimentally investigated and simulated to optimize the performance of the devices. The key to increasing the ON/OFF ratio and reducing power consumption is finding a suitable resistance match between the semiconductor and the resistive switching unit. By enhancing the mobility of the semiconductor, the performance of the device can also be significantly improved. This hybrid device provides new insights into the manufacture of magnetic field controlled non-volatile memory devices with potential of integrating computing and storage functions.
Magnetic Logic Based on Diode-Assisted Magnetoresistance

Zhaochu Luo,Xiaozhong Zhang

DOI: https://doi.org/10.1063/1.4975046

IF: 1.697

2017-01-01

AIP Advances

Abstract:Conventional computer suffers from the von Neumann performance bottleneck due to its hardware architecture that non-volatile memory and logic are separated. The new emerging magnetic logic coupling the extra dimension of spin, shows the potential to overcome this performance bottleneck. Here, we propose a novel category of magnetic logic based on diode-assisted magnetoresistance. By coupling Hall effect and nonlinear transport property in silicon, all four basic Boolean logic operations including AND, NAND, OR and NOR, can be programmed at room temperature with high output ratio in one silicon-based device. Further introducing anomalous Hall effect of magnetic material into magnetic logic, we achieve perpendicular magnetic anisotropy-based magnetic logic which combines the advantages of both high output ratio (>103 %) and low work magnetic field (∼1 mT). Integrated with non-volatile magnetic memory, our logic device with unique magnetoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in magnetic logic and offer a feasible platform to build a new kind of magnetic microprocessor with potential of high performance.
Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Zhaochu Luo,Xiaozhong Zhang,Chengyue Xiong,Jiaojiao Chen

DOI: https://doi.org/10.1002/adfm.201402955

IF: 19

2014-01-01

Advanced Functional Materials

Abstract:Silicon‐based complementary metal‐oxide‐semiconductor (CMOS) transistors have achieved great success. However, the traditional development pathway is approaching its fundamental limits. Magnetoelectronics logic, especially magnetic‐field‐based logic, shows promise for surpassing the development limits of CMOS logic and arouses profound attentions. Existing proposals of magnetic‐field‐based logic are based on exotic semiconductors and difficult for further technological implementation. Here, a kind of diode‐assisted geometry‐enhanced low‐magnetic‐field magnetoresistance (MR) mechanism is proposed. It couples p‐n junction's nonlinear transport characteristic and Lorentz force by geometry, and shows extremely large low‐magnetic‐field MR (>120% at 0.15 T). Further, it is applied to experimentally demonstrate current‐controlled reconfigurable magnetoresistance logic on the silicon platform at room temperature. This logic device could perform all four basic Boolean logic including AND, OR, NAND and NOR in one device. Combined with non‐volatile magnetic memory, this logic architecture with unique magnetoelectric properties has the advantages of current‐controlled reconfiguration, zero refresh consumption, instant‐on performance and would bridge the processor‐memory gap. Our findings would pave the way in silicon‐based magnetoelectronics and offer a route to make a new kind of microprocessor with potential of high performance.
Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Zhaochu Luo,Ziyao Lu,Chengyue Xiong,Tao Zhu,Wei Wu,Qiang Zhang,Huaqiang Wu,Xixiang Zhang,Xiaozhong Zhang

DOI: https://doi.org/10.1002/adma.201605027

IF: 29.4

2016-01-01

Advanced Materials

Abstract:In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.
Antiferromagnetic multi-level memristor using linear magnetoelectricity

Y. T. Chang,J. F. Wang,W. Wang,C. B. Liu,B. You,M. F. Liu,S. H. Zheng,M. Y. Shi,C. L. Lu,J. -M. Liu

DOI: https://doi.org/10.1103/PhysRevB.107.014412

2021-10-25

Abstract:The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor is recognized as a very promising circuit element to tackle the barriers, because of its fascinating advantages in imitating neural network of human brain, and thus realizing in-memory computing. However, there exist two core and fundamental issues: energy efficiency and accuracy, owing to the electric current operation of traditional memristors. In the present work, we demonstrate a new type of memristor, i.e. charge q and magnetic flux {\phi} space memristor, enabled by linear magnetoelectricity of Co4Nb2O9. The memory states show distinctly linear magnetoelectric coefficients with a large ratio of about 10, ensuing exceptional accuracy of related devices. The present q-{\phi} type memristor can be manipulated by magnetic and electric fields without involving electric current, paving the way to develop ultralow-energy-consuming devices. In the meanwhile, it is worth to mention that Co4Nb2O9 hosts an intrinsic compensated antiferromagnetic structure, which suggests interesting possibility of further integrating the unique merits of antiferromagnetic spintronics such as ultrahigh density and ultrafast switching. Linear magnetoelectricity is proposed to essential to the q-{\phi} type memristor, which would be accessible in a broad class of multiferroics and other magnetoelectric materials such as topological insulators. Our findings could therefore advance memristors towards new levels of functionality.

Materials Science
Memristive Devices and Systems: Modeling, Properties and Applications

Chun Sing Lai,Zhekang Dong,Donglian Qi

DOI: https://doi.org/10.3390/electronics12030765

IF: 2.9

2023-01-01

Electronics

Abstract:The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance [...]
Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

Liying Xu,Lin Bao,Teng Zhang,Ke Yang,Yimao Cai,Yuchao Yang,Ru Huang

DOI: https://doi.org/10.1109/icsict.2018.8565029

2018-01-01

Abstract:Nonvolatile logic based on memristors provides a promising approach toward efficient Non-von Neumann computing. Here we propose a methodology employing hybrid bipolar-unipolar memristive circuits for efficient in-memory logic functions. By combining the features of bipolar and unipolar memristors, the proposed circuits are able to execute both fundamental Boolean logic and arithmetic computing with high reconfigurability and high parallelism, which compares favorably with existing methods of in-memory logic based on memristors. This work could thus pave the way for the development of new in-memory computing architecture with high efficiency.
Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Yuchen Pu,Hongming Mou,Ziyao Lu,Seeraz Nawaz,Guilin Wang,Zhigang Zhang,Yuanjun Yang,Xixiang Zhang,Xiaozhong Zhang

DOI: https://doi.org/10.1063/5.0013301

IF: 4

2020-01-01

Applied Physics Letters

Abstract:Complementary metal-oxide-semiconductor logic circuits used in conventional computers require frequent communication with external nonvolatile memory, causing the memory wall problem. Recently reported magnetic logic with reconfigurable logic operation and built-in nonvolatile memory can potentially bridge this gap. However, its high-frequency performance is not well studied. Here, we first perform experimental and theoretical investigation on the switching time of magnetic logic-memory devices combining magnetic units and negative differential resistance (NDR) of semiconductors. It is found that the switching time of S-type NDR (transistor circuits) in logic operations is ∼300 ns and determined by the transistor's internal turn-on properties. We then propose a magnetic logic-memory device by coupling the anomalous Hall effect in magnetic materials and the insulator-to-metal transition in VO2. Our device realizes reliable output (output ratio > 1000%), a low work magnetic field (<20 mT), and excellent high-frequency performance (switching time = 1–10 ns).
Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Xueying Zhang,Wenlong Cai,Mengxing Wang,Biao Pan,Kaihua Cao,Maosen Guo,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Lin Wang,Fazhan Shi,Jiangfeng Du,Weisheng Zhao

DOI: https://doi.org/10.1002/advs.202004645

IF: 15.1

2021-03-08

Advanced Science

Abstract:<p>Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switching in a single device pose difficulties in physical implementation. Here, a nanoscale spin‐torque memristor based on a perpendicular‐anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure is experimentally demonstrated. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin‐transfer torque switching. Memristive states are retained by strong domain wall pinning effects in the free layer. Experiments and simulations suggest that nanoscale vertical chiral spin textures can form around clusters of W atoms under the combined effect of opposite Dzyaloshinskii–Moriya interactions and the Ruderman–Kittel–Kasuya–Yosida interaction between the two CoFeB free layers. Energy fluctuation caused by these textures may be the main reason for the strong pinning effect. With the experimentally demonstrated memristive behavior and spike‐timing‐dependent plasticity, a spiking neural network to perform handwritten pattern recognition in an unsupervised manner is simulated. Due to advantages such as long endurance and high speed, the spin‐torque memristors are competitive in the future applications for neuromorphic computing.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Jianxin Shen,Dashan Shang,Yisheng Chai,Yue Wang,Junzhuang Cong,Shipeng Shen,Liqin Yan,Wenhong Wang,Young Sun

DOI: https://doi.org/10.1103/physrevapplied.6.064028

IF: 4.6

2016-01-01

Physical Review Applied

Abstract:As the physical limitations of CMOS technology become increasingly restrictive, new approaches to high-performance memory and logic applications are needed. Along these lines the $m\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}r$ has attracted a lot of attention, but there is also the $m\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}r$, a memory element that correlates charge and magnetic flux via the nonlinear magnetoelectric effect. The authors show that the memtranstor provides a basis for both multilevel memory and nonvolatile, universal logic gates such as NOR and NAND, in a single device. This could present a significant advance in the next generation of computing systems.
An invisible non-volatile solid-state memory

J. Clarkson,C. Frontera,Z. Q. Liu,Y. Lee,J. Kim,K. Cordero,S. Wizotsky,F. Sanchez,J. Sort,S. L. Hsu,C Ko,J. Wu,H.M. Christen,J. T. Heron,D.G. Schlom,S. Salahuddin,L. Aballe,M. Foerster,N. Kioussis,J. Fontcuberta,I. Fina,R. Ramesh,X. Marti

DOI: https://doi.org/10.48550/arXiv.1604.03383

2016-09-07

Abstract:Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.

Materials Science
Review of the Fused Technology of Sensing, Storage and Computing Based on Memristor

Zhang Zhang,Li Chao,Han Tingting,Xu Ao,Cheng Xin,Liu Gang,Xie Guangjun

DOI: https://doi.org/10.11999/JEIT201102

2021-01-01

Abstract:Because of its low power consumption, high response, nanometer level, non-volatility and other characteristics, the memristor shows great development potential in the realization of non-von Neumann computing architecture. The high-density cross-array structure based on memristors can build logic circuits and brain-like computing circuits integrating data storage and parallel computing. In addition, the nanosensor and the memristor are further integrated, and the collected signals are calculated and stored in the memristor array. The chip technology integrating sensing, storage and computing become a new research focus. The research on the memristor-based storage-calculation integrated technology and sense-storage-calculated integrated technology are reviewed in this summary paper, and outding prospect of the research prospects are given.
A multilevel nonvolatile magnetoelectric memory based on memtranstor

Jianxin Shen,Junzhuang Cong,Dashan Shang,Yisheng Chai,Shipeng Shen,Kun Zhai,Young Sun

DOI: https://doi.org/10.48550/arXiv.1606.06852

2016-06-22

Abstract:The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient ({\alpha}) of multiferroics. Because the states of {\alpha} depends on the relative orientation between magnetization and polarization, one can reach different levels of {\alpha} by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of {\alpha} can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of {\alpha} is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

Materials Science
Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Ting Liu,Xiaoguang Li,Hongyu An,Shi Chen,Yuelei Zhao,Sheng Yang,Xiaohong Xu,Cangtao Zhou,Hua Zhang,Yan Zhou

DOI: https://doi.org/10.1038/s41598-024-65634-9

2024-06-26

Abstract:In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for in-memory computing, with spin-orbit torque (SOT) magnetic random-access memory (MRAM) being a leading area of research. In this study, we numerically demonstrate that a precise combination of damping-like and field-like spin-orbit torques can facilitate precessional magnetization switching. This mechanism enables the binary memristivity of magnetic tunnel junctions (MTJs) through the modulation of the amplitude and width of input current pulses. Building on this foundation, we have developed a scheme for a reconfigurable spintronic logic gate capable of directly implementing Boolean functions such as AND, OR, and XOR. This work is anticipated to leverage the sub-nanosecond dynamics of SOT-MRAM cells, potentially catalyzing further experimental developments in spintronic devices for in-memory computing.
Nonvolatile magnetic half adder combined with memory writing

Ziyao Lu,Chengyue Xiong,Hongming Mou,Zhaochu Luo,Chi Fang,Caihua Wan,Huaqiang Wu,Xixiang Zhang,Xiaozhong Zhang

DOI: https://doi.org/10.1063/5.0048448

IF: 4

2021-05-03

Applied Physics Letters

Abstract:With the rapid development of modern computers, problems caused by the performance gap between processor and memory in von-Neumann architecture have become significant. Spintronic devices, benefitting from the potential of achieving in-memory computing, have become one of the most competitive candidates to bridge the performance gap. Great efforts have been made to realize the functions of modern computers using spintronic devices. Here, a nonvolatile magnetic arithmetic logic device working at room temperature based on coupling of anomalous Hall effect of Ta/CoFeB/MgO multilayers with perpendicular magnetic anisotropy and elements with negative differential resistance characteristics has been proposed. Logic function of half adder has been experimentally demonstrated. This device could perform the arithmetic logic function of half adder and simultaneously write the computation result in storage bits in the process of performing logic operation. It has the potential to bridge the gap between arithmetic logic units and memory in modern computers.

physics, applied
A Spin–Orbit‐Torque Memristive Device

Shuai Zhang,Shijiang Luo,Nuo Xu,Qiming Zou,Min Song,Jijun Yun,Qiang Luo,Zhe Guo,Ruofan Li,Weicheng Tian,Xin Li,Hengan Zhou,Huiming Chen,Yue Zhang,Xiaofei Yang,Wanjun Jiang,Ka Shen,Jeongmin Hong,Zhe Yuan,Li Xi,Ke Xia,Sayeef Salahuddin,Bernard Dieny,Long You

DOI: https://doi.org/10.1002/aelm.201800782

IF: 6.2

2019-01-30

Advanced Electronic Materials

Abstract:Memristors, demonstrated by solid‐state devices with continuously tunable resistance, have emerged as a new paradigm for self‐adaptive networks that require synapse‐like functions (artificial synapse, for example). Spin‐based memristors offer advantages over other types of memristors because of their significant endurance and high energy efficiency. Yet it remains a challenge to build dense and functional spintronic memristors with structures and materials that are compatible with existing ferromagnetic devices. Here, a memristive device based upon Ta/CoFeB/MgO heterostructures is demonstrated, which are commonly used in out‐of‐plane magnetized magnetic tunnel junctions (MTJ). To achieve the memristive function, a domain wall (DW) is driven back and forth in a continuous manner in the CoFeB layer by applying in‐plane positive or negative current pulses along the Ta layer, utilizing the spin–orbit torque (SOT) that the current exerts on the CoFeB magnetization. Hence, the magnetization and consequently the anomalous Hall effect (AHE) resistance are modulated in an analog manner, being controlled by the pulsed current characteristics including amplitude, duration, and repetition number. The quasi‐continuous AHE resistance variation is explained by the SOT‐induced DW creep motion. These results pave the way for developing SOT‐based energy‐efficient neuromorphic systems. A memristive device based on a Ta/CoFeB/MgO heterostructure is demonstrated, utilizing spin–orbit torque (SOT) to drive a domain wall back and forth in the creep region. The anomalous Hall effect resistance can be modulated in an analog manner by the pulsed current characteristics including amplitude, polarity, duration, and repetition number, paving a way for developing SOT‐based energy‐efficient neuromorphic systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.

Weichuan Huang,Yue-Wen Fang,Yuewei Yin,Bobo Tian,Wenbo Zhao,Chuangming Hou,Chao Ma,Qi Li,Evgeny Y. Tsymbal,Chun-Gang Duan,Xiaoguang Li

DOI: https://doi.org/10.1021/acsami.7b18206

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence.
Spintronic memristors for computing

Qiming Shao,Zhongrui Wang,Yan Zhou,Shunsuke Fukami,Damien Querlioz,Yiran Chen,Leon O. Chua

2024-04-21

Abstract:The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications.

Applied Physics,Materials Science,Emerging Technologies
Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Yahong Chai,Yuhan Liang,Cancheng Xiao,Yue Wang,Bo Li,Dingsong Jiang,Pratap Pal,Yongjian Tang,Hetian Chen,Yuejie Zhang,Witold Skowroński,Qinghua Zhang,Lin Gu,Jing Ma,Pu Yu,Jianshi Tang,Yuan-Hua Lin,Di Yi,Daniel C. Ralph,Chang-Beom Eom,Huaqiang Wu,Tianxiang Nan

2023-09-26

Abstract:Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

Applied Physics,Mesoscale and Nanoscale Physics

Silicon Based Nonvolatile Magnetic Memristor.

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Magnetic Field Controlled Hybrid Semiconductor and Resistive Switching Device for Non-Volatile Memory Applications

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Antiferromagnetic multi-level memristor using linear magnetoelectricity

Memristive Devices and Systems: Modeling, Properties and Applications

Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

An invisible non-volatile solid-state memory

Review of the Fused Technology of Sensing, Storage and Computing Based on Memristor

A multilevel nonvolatile magnetoelectric memory based on memtranstor

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Nonvolatile magnetic half adder combined with memory writing

A Spin–Orbit‐Torque Memristive Device

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.

Spintronic memristors for computing

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory