Memristive Devices and Systems: Modeling, Properties and Applications

Chun Sing Lai,Zhekang Dong,Donglian Qi

DOI: https://doi.org/10.3390/electronics12030765

IF: 2.9

2023-01-01

Electronics

Abstract:The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance [...]

What problem does this paper attempt to address?

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Xiangyu Zeng,Liang Zhang,Jiaqi Peng,Qikai Ye,Boyang Ma,Hongsheng Xu,Yulu Liu,Nazifi Sani Shuaibu,Xiaozhi Wang,Yixiu Wang,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1063/5.0170984

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Emerging intelligence applications, such as brain-inspired and in-memory computing, require memory with faster read/write speeds, higher integration, and lower energy consumption. To tackle these challenges, memristors, a type of synaptic device, are considered ideal candidates due to their potential for emulating biological synaptic connections. In this study, a two-dimensional (2D) heterostructure of tellurene/Nb-doped MoS2 (MoS2:Nb) was used as the resistive switching layer to fabricate memristors. By varying the maximum working voltage, the fabricated device can switch between one and two-memory windows, which can be used to imitate the postsynaptic inhibition effect. This is attributed to the competition between the drift and diffusion of the S vacancy in the MoS2:Nb layer, which can modulate the contact Schottky barrier in the material interfaces. Furthermore, biological synapse effects, such as long-term depression and long-term potentiation, can be well mimicked by applying several voltage pulses to the device with good repeatability. This study advances the device physics for understanding the physical working mechanism of the 2D memristor, which can benefit the realization of bio-realistic neuromorphic computing systems based on such memristors.
Memristive Computing Devices and Applications

Mohammed A. Zidan,An Chen,Giacomo Indiveri,Wei D. Lu

DOI: https://doi.org/10.1007/s10832-017-0103-0

2017-01-01

Journal of Electroceramics

Abstract:Advances in electronics have revolutionized the way people work, play and communicate with each other. Historically, these advances were mainly driven by CMOS transistor scaling following Moore’s law, where new generations of devices are smaller, faster, and cheaper, leading to more powerful circuits and systems. However, conventional scaling is now facing major technical challenges and fundamental limits. New materials, devices, and architectures are being aggressively pursued to meet present and future computing needs, where tight integration of memory and logic, and parallel processing are highly desired. To this end, one class of emerging devices, termed memristors or memristive devices, have attracted broad interest as a promising candidate for future memory and computing applications. Besides tremendous appeal in data storage applications, memristors offer the potential to enable efficient hardware realization of neuromorphic and analog computing architectures that differ radically from conventional von Neumann computing architectures. In this review, we analyze representative memristor devices and their applications including mixed signal analog-digital neuromorphic computing architectures, and highlight the potential and challenges of applying such devices and architectures in different computing applications.
Memristors: Understanding, Utilization and Upgradation for Neuromorphic Computing

Mohanbabu Bharathi,Zhiwei Wang,Bingrui Guo,Babu Balraj,Qiuhong Li,Jianwei Shuai,Donghui Guo

DOI: https://doi.org/10.1142/s1793292020300054

2020-01-01

NANO

Abstract:The next generation of artificial intelligence systems is generally governed by a new electronic element called memristor. Memristor-based computational system is responsible for confronting memory wall issues in conventional system architecture in the big data era. Complementary Metal Oxide Semiconductor (CMOS) compatibility, nonvolatility and scalability are the important properties of memristor for designing such computing architecture. However, some of the concerns, such as analogue switching and stochasticity, need to be addressed for the use of memristor in novel architecture. Here, we reviewed a number of important scientific works on memristor materials, electrical performance and their integration. In addition, strategies to address the challenges of memristor integration in neuromorphic computing are also being investigated.
A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

X. Ji,Z. Dong,C. S. Lai,G. Zhou,D. Qi

DOI: https://doi.org/10.1016/j.mtadv.2022.100293

IF: 9.918

2022-01-01

Materials Today Advances

Abstract:Bio-inspired computing promises fundamentally different ways to advances in artificial intelligence with extreme energy efficiency. Memristive technologies due to the non-volatility, high density, low-power, and synaptic bionic properties can help in realizing bio-inspired architecture and its hardware implementation. This paper proposes a novel physics-oriented memristor model with coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior for bio-inspired computing. Firstly, an Ag/TiOx/FTO memristor is fabricated using sol-gel and magnetron sputtering method, and its performance test demonstrates that the coexistence of NDR effect and RS memory behavior can be modulated by the moisture. Then, a physical-oriented memristor model is constructed, which provides the possibility to explore the dynamics of the coexistence of NDR effect and RS memory behavior in simulation. Furthermore, a memristor-based affective computing circuit emulating the process of human affective associative learning is designed. The experiment demonstrates that the coexistence of NDR effect and RS memory behavior can change the memory time without additional circuit and cost, which is expected to realize the automatic conversion from short-term memory to long-term memory in bio-inspired computing.
Memristive System Based Image Processing Technology: A Review and Perspective

Xiaoyue Ji,Zhekang Dong,Guangdong Zhou,Chun Sing Lai,Yunfeng Yan,Donglian Qi

DOI: https://doi.org/10.3390/electronics10243176

IF: 2.9

2021-01-01

Electronics

Abstract:As the acquisition, transmission, storage and conversion of images become more efficient, image data are increasing explosively. At the same time, the limitations of conventional computational processing systems based on the Von Neumann architecture continue to emerge, and thus, improving the efficiency of image processing has become a key issue that has bothered scholars working on images for a long time. Memristors with non-volatile, synapse-like, as well as integrated storage-and-computation properties can be used to build intelligent processing systems that are closer to the structure and function of biological brains. They are also of great significance when constructing new intelligent image processing systems with non-Von Neumann architecture and for achieving the integrated storage and computation of image data. Based on this, this paper analyses the mathematical models of memristors and discusses their applications in conventional image processing based on memristive systems as well as image processing based on memristive neural networks, to investigate the potential of memristive systems in image processing. In addition, recent advances and implications of memristive system-based image processing are presented comprehensively, and its development opportunities and challenges in different major areas are explored as well. By establishing a complete spectrum of image processing technologies based on memristive systems, this review attempts to provide a reference for future studies in the field, and it is hoped that scholars can promote its development through interdisciplinary academic exchanges and cooperation.
The future of electronics based on memristive systems

Mohammed A. Zidan,John Paul Strachan,Wei D. Lu

DOI: https://doi.org/10.1038/s41928-017-0006-8

IF: 33.255

2018-01-01

Nature Electronics

Abstract:A memristor is a resistive device with an inherent memory. The theoretical concept of a memristor was connected to physically measured devices in 2008 and since then there has been rapid progress in the development of such devices, leading to a series of recent demonstrations of memristor-based neuromorphic hardware systems. Here, we evaluate the state of the art in memristor-based electronics and explore where the future of the field lies. We highlight three areas of potential technological impact: on-chip memory and storage, biologically inspired computing and general-purpose in-memory computing. We analyse the challenges, and possible solutions, associated with scaling the systems up for practical applications, and consider the benefits of scaling the devices down in terms of geometry and also in terms of obtaining fundamental control of the atomic-level dynamics. Finally, we discuss the ways we believe biology will continue to provide guiding principles for device innovation and system optimization in the field.

engineering, electrical & electronic
Memristor Dynamics Enabled Computing

Yuchao Yang

DOI: https://doi.org/10.1109/edtm53872.2022.9798267

2022-01-01

Abstract:Since the connection of the theoretical memristor concept with physical resistive switching devices in 2008, tremendous progress has been made in terms of material and device technology developments and their applications in memory and computing systems. The physical embodiments of memristors correspond to various resistive switching devices based on different mechanisms. These mechanisms endow the memristors with rich nonlinear dynamics, which is key to constructing biologically plausible dynamic computing systems. Memristor can be described as a set of differential equations that indicate how the internal state variables determine device characteristics and how external electrical stimulations influence these state variables. The increases in the number of state variables and internal dynamics have dramatically enriched the dynamics and functionality of memristors. Further exploration and control of such dynamics are essential for highly efficient information processing applications.
Research Progress on Memristor: From Synapses to Computing Systems

Xiaoxuan Yang,Brady Taylor,Ailong Wu,Yiran Chen,Leon O. Chua

DOI: https://doi.org/10.1109/tcsi.2022.3159153

2022-05-01

Abstract:As the limits of transistor technology are approached, feature size in integrated circuit transistors has been reduced very near to the minimum physically-realizable channel length, and it has become increasingly difficult to meet expectations outlined by Moore's law. As one of the most promising devices to replace transistors, memristors have many excellent properties that can be leveraged to develop new types of neural and non-von Neumann computing systems, which are expected to revolutionize information-processing technology. This survey provides a comparative overview of research progress on memristors. Different memristor synaptic devices are classified according to stimulation patterns and the working mechanisms of these various synaptic devices are analyzed in detail. Crossbar-based memristors have demonstrated advantages in physically executing vector-matrix multiplication and enabling highly power-efficient and area-efficient neuromorphic system designs. The extensive uses of crossbar-based memristors cover in-memory logic, vector-matrix multiplication, and many other fundamental computing operations. Furthermore, memristor-based architectures for efficient neural network training and inference have been studied. However, memristors have non-ideal properties due to programming inaccuracies and device imperfections from fabrication, which lead to error or mismatch in computed results. To build reliable memristor-based designs, circuit-level, algorithm-level, and system-level solutions to memristor reliability issues are being studied. To this end, state-of-the-art realizations of memristor crossbars, crossbar-based designs, and peripheral circuitry are presented, which show both promising full-system inference accuracy and excellent power efficiency in multiple tasks. Memristor in-situ learning benefits from high energy efficiency and biologically-imitative characteristics, which are conducive to further realizing hardware acceleration of-cognitive learning. At present, the learning and training processes of brain-like networks are complex, presenting great challenges for network design and implementation.

engineering, electrical & electronic
Memristors for Memory and Computing Applications

Yuchao Yang

DOI: https://doi.org/10.1364/isst.2017.isu4b.1

2017-01-01

Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].
Versatile memristor for memory and neuromorphic computing

Tao Guo,Kangqiang Pan,Yixuan Jiao,Bai Sun,Cheng Du,Joel P Mills,Zuolong Chen,Xiaoye Zhao,Lan Wei,Y Norman Zhou,Yimin A Wu

DOI: https://doi.org/10.1039/d1nh00481f

2022-01-01

Nanoscale Horizons

Abstract:The memristor is a promising candidate to implement high-density memory and neuromorphic computing. Based on the characteristic retention time, memristors are classified into volatile and non-volatile types. However, a single memristor generally provides a specific function based on electronic performances, which poses roadblocks for further developing novel circuits. Versatile memristors exhibiting both volatile and non-volatile properties can provide multiple functions covering non-volatile memory and neuromorphic computing. In this work, a versatile memristor with volatile/non-volatile bifunctional properties was developed. Non-volatile functionality with a storage window of 4.0 x 10(5) was obtained. Meanwhile, the device can provide threshold volatile functionalities with a storage window of 7.0 x 10(4) and a rectification ratio of 4.0 x 10(4). The leaky integrate-and-fire (LIF) neuron model and artificial synapse based on the device have been studied. Such a versatile memristor enables non-volatile memory, selectors, artificial neurons, and artificial synapses, which will provide advantages regarding circuit simplification, fabrication processes, and manufacturing costs.
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song,Ji-Hoon Kang,Xinyuan Zhang,Wonjae Ji,Alon Ascoli,Ioannis Messaris,Ahmet Samil Demirkol,Bowei Dong,Samarth Aggarwal,Weier Wan,Seok-Man Hong,Suma George Cardwell,Irem Boybat,Jae-sun Seo,Jang-Sik Lee,Mario Lanza,Hanwool Yeon,Murat Onen,Ju Li,Bilge Yildiz,Jesús A. del Alamo,Seyoung Kim,Shinhyun Choi,Gianluca Milano,Carlo Ricciardi,Lambert Alff,Yang Chai,Zhongrui Wang,Harish Bhaskaran,Mark C. Hersam,Dmitri Strukov,H.-S. Philip Wong,Ilia Valov,Bin Gao,Huaqiang Wu,Ronald Tetzlaff,Abu Sebastian,Wei Lu,Leon Chua,J. Joshua Yang,Jeehwan Kim,Jesús A. del Alamo

DOI: https://doi.org/10.1021/acsnano.3c03505

IF: 17.1

2023-06-30

ACS Nano

Abstract:Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Memristive brain-like computing

Xin-Yu Wen,Ya-Sai Wang,Yu-Hui He,Xiang-Shui Miao,Institute of Information Storage Materials and Devices, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China,Hubei Yangtze Memory Laboratories, Wuhan 430205, China

DOI: https://doi.org/10.7498/aps.71.20220666

IF: 0.906

2022-07-22

Acta Physica Sinica

Abstract:Author(s): Wen Xin-Yu, Wang Ya-Sai, He Yu-Hui, Miao Xiang-Shui With the rapid development of deep learning, the current rapid update and iteration of intelligent algorithms put forward high requirements for hardware computing power. Limited by the exhaustion of Moore's law and the von Neumann bottleneck, the traditional CMOS integration cannot meet the urgent needs of hardware computing power improvement. The utilization of new device memristors to construct a neuromorphic computing system can realize the integration of storage and computing, and has the characteristics of extremely high parallelism and ultra-low power consumption. In this work, the device structure and physical mechanism of mainstream memristors are reviewed in bottom-to-top order firstly, and their performance characteristics are compared and analyzed. Then, the recent research progress of memristors to realize artificial neurons and artificial synapses is introduced, including the simulation of specific circuit forms and neuromorphic functions. Secondly, in this work, the structural forms of passive and active memristive arrays and their applications in neuromorphic computing, including neural network-based handwritten digits and face recognition, are reviewed. Lastly, the current challenges of memristive brain-like computing from the bottom to the top, are summarized and the future development of this field is also prospected. Acta Physica Sinica. 2022 71(14): 140501. Published 2022-07-20

physics, multidisciplinary
Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Guangdong Zhou,Zhongrui Wang,Bai Sun,Feichi Zhou,Linfeng Sun,Hongbin Zhao,Xiaofang Hu,Xiaoyan Peng,Jia Yan,Huamin Wang,Wenhua Wang,Jie Li,Bingtao Yan,Dalong Kuang,Yuchen Wang,Lidan Wang,Shukai Duan

DOI: https://doi.org/10.1002/aelm.202101127

IF: 6.2

2022-02-10

Advanced Electronic Materials

Abstract:Ion migration as well as electron transfer and coupling in resistive switching materials endow memristors with a physically tunable conductance to resemble synapses, neurons, and their networks. Four different types of volatile memristors and another four types of nonvolatile memristors are systemically surveyed in terms of the switching mechanisms and electrical properties that are the basis of different computing applications. The volatile memristor features spontaneous conductance decay after the cease of electrical/optical stimulations, which are closely related to the surface atom diffusion, metal–insulator–transition (including charge–density–wave), thermal spontaneous emission, and charge polarization. Such unique dynamic state evolution at the edge of chaos has enabled them to emulate certain synaptic and neural dynamics, leading to various applications ranging from spiking neural networks to combinatorial optimizations. Nonvolatile resistive switching behavior originated from the electron spins, ferroelectric polarization, crystalline‐amorphous transitions or interplay between ions and electrons enables the memristor array to implement the vector–matrix multiplication, which is the key convolutional operation in artificial neural networks. The progress, challenges, and opportunities for both volatile and nonvolatile memristor in the level of materials, integration technology, algorithm, and system are highlighted in this review. Four volatile memristors and four nonvolatile memristors in terms of the switching dynamics, application in neuromorphic computing, and architectures of memristor arrays are systemically summarized. The motivation of this review is to refine the conception of volatile and nonvolatile memristor, summarizes the important progress in hardware technology, and proposes the possible solutions in different level for memristor‐based neuromorphic computing.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Mario Lanza,Abu Sebastian,Wei D. Lu,Manuel Le Gallo,Meng-Fan Chang,Deji Akinwande,Francesco M. Puglisi,Husam N. Alshareef,Ming Liu,Juan B. Roldan

DOI: https://doi.org/10.1126/science.abj9979

IF: 56.9

2022-06-04

Science

Abstract:Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

multidisciplinary sciences
Memristive Model for Synaptic Circuits

Yang Zhang,Xiaoping Wang,Yi Li,Eby G. Friedman

DOI: https://doi.org/10.1109/tcsii.2016.2605069

2017-01-01

Abstract:As a promising alternative for next-generation memory, memristors provide several useful features such as high density, nonvolatility, low power, and good scalability as compared with conventional CMOS-based memories. In this brief, a voltage-controlled threshold memristive model is proposed, which is based on experimental data of memristive devices. Moreover, the model is more suitable for the design of memristor-based synaptic circuits as compared with other memristive models. The effects of memristance variations are considered in the proposed model to evaluate the behavior of memristive synapses within memristor-based neural networks.
RRAM/memristor for Computing

Rivu Midya,Zhongrui Wang,Mingyi Rao,Navnidhi K. Upadhyay,Jianhua Yang

DOI: https://doi.org/10.1016/b978-0-08-102584-0.00015-2

2019-01-01

Abstract:Memristors are effectively variable resistors whose resistance can be modified electrically. This state of internal resistance is a function of the history of the applied voltage or current. Such devices have the ability to store and process data and provide for several attractive performance characteristics that make it more capable at solving modern day computing problems compared to conventional complementary metal-oxide-semiconductor (CMOS)-based technology. These devices are often built out of a simple conductor/insulator/conductor stack and the insulator is often comprised of a metal oxide. Although, the idea for such devices was conceived as early as the 1960s, only recent progress in the field has been able to achieve very desirable features such as fast operation speed, low-energy consumption, and high endurance. Apart from that, these devices can be scaled down to less than 10 nm and stacked in three dimensions. In this chapter, we review recent progress in the development and understanding of memristive devices. We also explore how memristive devices have been used by the community in useful computing applications.
Memristor, mem-systems and neuromorphic applications: a review

Viet-Thanh Pham,Christos Volos,Tomasz Kapitaniak

DOI: https://doi.org/10.1016/b978-0-12-821184-7.00022-0

2021-01-01

Abstract:The memristor has received significant attention recently. The memristor is a potential candidate for various applications like switching devices, low-power sensors, neural networks, bio-inspired implementations, memory elements, programmable logic, signal processing, and so on. It is worth noting that researchers have attempted to evaluate the impact of the memristor for fast computation like artificial intelligence chips. In this chapter, we would like to summarize briefly recent researches related to memristor, mem-systems, and their neuromorphic applications. Especially, neuromorphic circuits and artificial intelligence applications are addressed. In addition, challenges, current issues and future trends are discussed.
From Memristive Materials to Neural Networks

Tao Guo,Bai Sun,Shubham Ranjan,Yixuan Jiao,Lan Wei,Y. Norman Zhou,Yimin A. Wu

DOI: https://doi.org/10.1021/acsami.0c10796

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:The information technologies have been increasing exponentially following Moore's law over the past decades. This has fundamentally changed the ways of work and life. However, further improving data process efficiency is facing great challenges because of physical and architectural limitations. More powerful computational methodologies are crucial to fulfill the technology gap in the post-Moore's law period. The memristor exhibits promising prospects in information storage, high-performance computing, and artificial intelligence. Since the memristor was theoretically predicted by L. O. Chua in 1971 and experimentally confirmed by HP Laboratories in 2008, it has attracted great attention from worldwide researchers. The intrinsic properties of memristors, such as simple structure, low power consumption, compatibility with the complementary metal oxide-semiconductor (CMOS) process, and dual functionalities of the data storage and computation, demonstrate great prospects in many applications. In this review, we cover the memristor-relevant computing technologies, from basic materials to in-memory computing and future prospects. First, the materials and mechanisms in the memristor are discussed. Then, we present the development of the memristor in the domains of the synapse simulating, in-memory logic computing, deep neural networks (DNNs) and spiking neural networks (SNNs). Finally, the existent technology challenges and outlook of the state-of-art applications are proposed.
Electronic and Photoelectronic Memristors Based on 2D Materials

Kai Tang,Yang Wang,Chuanhui Gong,Chujun Yin,Miao Zhang,Xianfu Wang,Jie Xiong

DOI: https://doi.org/10.1002/aelm.202101099

IF: 6.2

2022-01-05

Advanced Electronic Materials

Abstract:Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed. Rapid development of 2D memristive devices including electronic and photoelectronic memristors is reviewed detailedly focusing on physical and chemical mechanisms as well as material's modification and structural innovation, with highlight of their application in brain‐like computation and visual neural network.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Nanoscale resistive switching devices: mechanisms and modeling.

Yuchao Yang,Wei Lu

DOI: https://doi.org/10.1039/c3nr03472k

IF: 6.7

2013-01-01

Nanoscale

Abstract:Resistive switching devices (also termed memristive devices or memristors) are two-terminal nonlinear dynamic electronic devices that can have broad applications in the fields of nonvolatile memory, reconfigurable logic, analog circuits, and neuromorphic computing. Current rapid advances in memristive devices in turn demand better understanding of the switching mechanism and the development of physics-based as well as simplified device models to guide future device designs and circuit-level applications. In this article, we review the physical processes behind resistive switching (memristive) phenomena and discuss the experimental and modeling efforts to explain these effects. In this article three categories of devices, in which the resistive switching effects are driven by cation migration, anion migration, and electronic effects, will be discussed. The fundamental driving forces and the stochastic nature of resistive switching will also be discussed.

Memristive Devices and Systems: Modeling, Properties and Applications

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Memristive Computing Devices and Applications

Memristors: Understanding, Utilization and Upgradation for Neuromorphic Computing

A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

Memristive System Based Image Processing Technology: A Review and Perspective

The future of electronics based on memristive systems

Memristor Dynamics Enabled Computing

Research Progress on Memristor: From Synapses to Computing Systems

Memristors for Memory and Computing Applications

Versatile memristor for memory and neuromorphic computing

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Memristive brain-like computing

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Memristive Model for Synaptic Circuits

RRAM/memristor for Computing

Memristor, mem-systems and neuromorphic applications: a review

From Memristive Materials to Neural Networks

Electronic and Photoelectronic Memristors Based on 2D Materials

Nanoscale resistive switching devices: mechanisms and modeling.