Abstract:The explosive demands of storage capacity and the von Neumann bottleneck of modern computer architectures trigger many innovations in information technology. Amongst them, nonvolatile spintronics attract considerable attentions for which can embed the computation capability into memory, enable neuromorphic, and probabilistic computing. These exciting progresses typically rely on the manipulation of the relative magnetization orientations of two magnetic layers. By extending to 3D spintronic architectures made of multiple magnetic layers (n), the exponentially increased 2n magnetic states can provide ample opportunities for implementing novel spintronic functionalities. Here, through building perpendicularly magnetized 3D spin‐orbitronic architectures – [Pt/Fe1−xTbx/Si3N4]n multilayers, it is demonstrated the electrical programing of 2n memory states via current‐induced spin–orbit torques (SOTs), and the accompanied reconfigurable multifunction in‐memory logic features in a single four‐terminal Hall device. Further, an electrical readout of these 2n states, together with the implementation of Boolean logic gates and digital circuitry such as 2–4 and 3–8 decoders, are successfully conducted. More complex logic circuits are also envisioned. The experiments thus substantiate 3D spin‐orbitronic structures as a promising platform for exponentially boosting the storage capacity and accommodating in‐memory computing that can be important for promoting the emerging 3D nanospintronics.

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Nonvolatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Current-driven Magnetic Domain-Wall Logic

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Nonvolatile magnetic half adder combined with memory writing

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell.

Magnetic Domain-Wall Racetrack Memory-Based Nonvolatile Logic for Low-Power Computing and Fast Run-Time-Reconfiguration.

Silicon Based Nonvolatile Magnetic Memristor.

Magnetic Field Controlled Hybrid Semiconductor and Resistive Switching Device for Non-Volatile Memory Applications

Magnetic Full Adder Based on Negative Differential Resistance-Enhanced Anomalous Hall Effect

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

Computing with spins and magnets

Asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

Electrically Reconfigurable 3D Spin‐Orbitronics