High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

Jianjun Chen,Ningyuan Yin,Zhiyi Yu
DOI: https://doi.org/10.1109/icsict.2018.8564892
2018-01-01
Abstract:Magnetic tunnel junction (MTJ) device, a nonvolatile spintronics device, draws wide attention for its low current drive, non-volatility, small size, infinite erasure, and low standby power. It is widely used in magnetic random-access memory (MRAM) or embedded in CMOS logical circuits. In this paper, a novel high speed, low resource and non-volatile MTJ-CMOS hybrid logical circuit structure is proposed, which consists of Multi Voltage controlled Multi-Write (MVMW) write circuit and High-Speed Sense Amplifier (HSSA) circuit. The MVMW write circuit enhances the write speed by shortening the critical path while achieving two independent write controls of the MTJs. Also, a voltage comparator sense amplifier is employed to increase the read speed (about 110ps). By using a dynamic compact MTJ model and 55 nm CMOS design kit, we designed a circuit architecture which can be used to form all kinds of logical computations. An AND/NAND logical is used to demonstrate functionality of the architecture and compared it with a traditional MTJ-CMOS hybrid circuit. The proposed non-volatile MTJ-CMOS hybrid circuit uses only 62.5% of resources, achieving a 4.37X write speed and a 2.64X read speed. The overall average speed increases 3.12 times with similar power consumption. Moreover, it is compatible for asynchronous circuits design.
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