Abstract:Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductors industry 1-2 . However, most studies in this field have been limited to the fabrication and characterization of isolated large (>1μm 2 ) devices on unfunctional SiO 2 /Si substrates. Some studies integrated monolayer graphene on silicon microchips as large-area (>500μm 2 ) interconnection 3 and as channel of large transistors (~16.5μm 2 ) 4-5 , but in all cases the integration density was low, no computation was demonstrated, and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here we present the fabrication of high-integration-density 2D/CMOS hybrid microchips for memristive applications — CMOS stands for complementary metal oxide semiconductor. We transfer a sheet of multilayer hexagonal boron nitride (h-BN) onto the back-end-of-line (BEOL) interconnections of silicon microchips containing CMOS transistors of the 180nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the h-BN memristors, which allows us to achieve endurances of ~5 million cycles in memristors as small as ~0.053μm 2 . We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity (STDP) signals that are suitable for the implementation of spiking neural networks (SNN). The high performance and the relatively-high technology readiness level achieved represent a significant advance towards the integration of 2D materials in microelectronic products and memristive applications.

Josephson-CMOS Hybrid Memory with Ultra-High-speed Interface Circuit

Implementation and low speed test of ultra-fast interface circuits for Josephson-CMOS hybrid memories

Demonstration Of Fully Functional 64-Kb Josephson/Cmos Hybrid Memory

Hybrid Josephson-CMOS memory: a solution for the Josephson memory problem

High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

Superconducting Pulse Conserving Logic and Josephson-SRAM

A Serial Access Scheme Design on Memristor-CMOS Hybrid Memory

Very Large Scale Integration of Josephson-Junction-Based Superconductor Random Access Memories

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

A 380 ps, 9.5 mW Josephson 4-Kbit RAM operated at a high bit yield

Reliability Emphasized MTJ/CMOS Hybrid Circuit Towards Ultra-Low Power.

Separated Precharge Sensing Amplifier for Deep Submicrometer MTJ/CMOS Hybrid Logic Circuits

Configurable Memory with a Multilevel Shared Structure Enabling In-Memory Computing

Low Store Power, High Speed, High Density, Nonvolatile SRAM Design with Spin Hall Effect-Driven Magnetic Tunnel Junctions

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

Hybrid 2D/CMOS microchips for memristive applications

In-Memory Direct Processing Based On Nanoscale Perpendicular Magnetic Tunnel Junctions

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Cross-coupled 4T2R Multi-Logic In-Memory Computing Circuit Design

High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits