Abstract:In this paper we will report our recent progress in realizing a Josephson-CMOS hybrid random-access memory. We have established a 4 K CMOS device model based on low-temperature experimental data on discrete MOS devices. We implemented an ultra-high-speed interface circuit to amplify millivolt-level Josephson input signals to volt-level signals for CMOS. circuits. The interface circuit includes a Josephson series-array pre-amplifier and an ultra-fast hybrid Josephson-CMOS amplifier. Simulation and optimization of the interface circuit have predicted a delay of less than 60 ps. We have designed and fabricated the interface circuit using the 0.25 mum National Semiconductor Corporation (NSC) process for the CMOS chip, and the UC Berkeley 6.5 kA/cm(2) Nb process for the Josephson junction (JJ) chip. The functionality of the interface circuit has been tested and proved by wire-bonding the CMOS chip to the JJ chip. We also demonstrate the design and fabrication of a model 64-kbit Josephson-CMOS hybrid memory; this circuit includes the ultra-high-speed interface, address buffers, word line decoders, 3T DRAM-type cells, and Josephson sensing circuits; these are fabricated using the 0.25 pm NSC CMOS process and the UC Berkeley Nb process. Subnanosecond access time is predicted by a conservative simulation that used a room-temperature model for the CMOS. We plan a stacked-chip structure using very short wire bonding with which we will be able to measure subnanosecond access times.

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A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

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A Logic-Process Compatible RRAM with 15.43 Mb/mm<sup>2</sup> Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall

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A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

Implementation and low speed test of ultra-fast interface circuits for Josephson-CMOS hybrid memories

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

An 8kb 40-Nm 2T2MTJ STT-MRAM Design with 2.6ns Access Time and Time-Adjustable Writing Process

Design and Implementation of a Hybrid, ADC/DAC-Free, Input-Sparsity-Aware, Precision Reconfigurable RRAM Processing-in-Memory Chip