Abstract:The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation.

An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire Via Local Gating

Memory Devices: an Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire Via Local Gating (adv. Electron. Mater. 6/2019)

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

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A Compact Superconducting Nanowire Memory Element Operated by Nanowire Cryotrons

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Room-temperature logic-in-memory operations in single-metallofullerene devices

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

Solid-Ionic Memory in a van der Waals Heterostructure

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Magnetic Nanoislands in a Morphotropic Cobaltite Matrix

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications