Abstract:Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-the-art computing systems, to a large extent, result from the well-known von-Neumann bottleneck. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications such as artificial intelligence, machine learning, and cryptography. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable in-memory Boolean computations. In this paper, we present an augmented version of the conventional SRAM bit-cells, called the X-SRAM, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations, including NAND, NOR, IMP (implication), XOR logic gates, with respect to different bit-cell topologies − the 8T cell and the 8+T Differential cell. In addition, we also present a novel ‘read-compute-store’ scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using the predictive transistor models and detailed Monte-Carlo variation analysis. As an illustration, we also present the efficacy of the proposed in-memory computations by implementing advanced encryption standard algorithm on a non-standard von-Neumann machine wherein the conventional SRAM is replaced by X-SRAM. Our simulations indicated that up to 75% of memory accesses can be saved using the proposed techniques.

Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM)

In-Memory Computing with Double Word Lines and Three Read Ports for Four Operands.

A 10T SRAM with Two Read and Write Modes Across Row and Column for CAM Operation and Computing In-Memory

Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports

A 9T-SRAM Based Computing-in-memory with Redundant Unit and Digital Operation for Boolean Logic and MAC

An 11T SRAM Cell for the Dual-Direction In-Array Logic/CAM Operations

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

REAL: Logic and Arithmetic Operations Embedded in RRAM for General-Purpose Computing

Functionally Complete Boolean Logic and Adder Design Based on 2T2R RRAMs for Post-CMOS In-Memory Computing

Logic Circuit and Memory Design for In-Memory Computing Applications Using Bipolar RRAMs

Efficient Implementation of Boolean and Full-Adder Functions with 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

ROBIN: Monolithic-3D SRAM for Enhanced Robustness with In-Memory Computation Support

Implementation Of Functionally Complete Boolean Logic And 8-Bit Adder In Cmos Compatible 1t1r Rrams For In-Memory Computing

An Area-Efficient In-Memory Implementation Method of Arbitrary Boolean Function Based on SRAM Array

An 8T SRAM Array with Configurable Word Lines for In-Memory Computing Operation

A 9T-SRAM In-Memory Computing Macro for Boolean Logic and Multiply-and-accumulate Operations

Configurable and High-Throughput CIM SRAM for Boolean Logic Operation with 321 GOPS/kb and 164395.6 GOPS/mm2

A 28-Nm Compute SRAM with Bit-Serial Logic/Arithmetic Operations for Programmable In-Memory Vector Computing

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

Computing In-Memory Design Based on Double Word Line and Double Threshold 4T SRAM