Abstract:In-memory logic calculations and brain-inspired artificial synaptic neuromorphic computing are expected to solve the limitations of the traditional von Neumann computing architecture. The data processing efficiency of the traditional von Neumann architecture is inherently limited by its physically separated processing and storage units, and thus data transmission besides calculation leads to a limited calculation speed and additional high-power consumption. In addition, traditional digital logic calculations and analog calculations have greater limitations in conversion. Herein, we report a flexible two-terminal memristor based on SiCO:H, which is a porous low-k back-end complementary metal-oxide-semiconductor (CMOS)-compatible material. Due to its low operating voltage (200 mV) and fast response speed (100 ns), it could perform digital memory calculation and neuromorphic calculation simultaneously. The memristor could realize a transition from short-term to long-term plasticity in the process of enhancement and inhibition during neuromorphic calculation, with high biological reality. In digital logic calculations, IMP-based and MAGIC-based logic calculations were verified. In neuromorphic computing, an Ag ion-based conductive filament was introduced. The relationship between the temporal dynamics of the conductance evolution and the diffusive dynamics of the Ag active metal could be modulated by the external programming electric field strength. The synapses and neuron dynamics in biology were faithfully simulated, realizing a transition from short-term to long-term plasticity in the process of enhancement and inhibition, which has high compatibility and scalability, proposing a novel solution for the next generation of computer architectures.

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

A Novel Resistive Memory-based Process-in-memory Architecture for Efficient Logic and Add Operations

Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations

Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory

Parallel Stateful Logic in RRAM: Theoretical Analysis and Arithmetic Design

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

STAR: Synthesis of Stateful Logic in RRAM Targeting High ARea Utilization

Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

A Novel Capacitor-based Stateful Logic Operation Scheme for In-memory Computing in 1T1R RRAM Array

Stateful Logic using Phase Change Memory

Memorable Logic Gate Based on Field Effect Oxide Resistive Switching Devices

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Compute-in-Memory with 6T-RRAM Memristive Circuit for Next-Gen Neuromorphic Hardware

Emulating long-term synaptic dynamics with memristive devices