Abstract:Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. Low ON-state resistance of filamentary RRAM devices further increases the energy consumption due to high-current read and write operations, and limits the array size and parallel multiply & accumulate operations. High-forming voltages needed for filamentary RRAM are not compatible with advanced CMOS technology nodes. To address all these challenges, we developed a forming-free and bulk switching RRAM technology based on a trilayer metal-oxide stack. We systematically engineered a trilayer metal-oxide RRAM stack and investigated the switching characteristics of RRAM devices with varying thicknesses and oxygen vacancy distributions across the trilayer to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching operation at megaohm regime with high current nonlinearity and programmed up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars by combining energy-efficient switched-capacitor voltage sensing circuits with differential encoding of weights to experimentally demonstrate high-accuracy matrix-vector multiplication. We showcased the computational capability of bulk RRAM crossbars by implementing a spiking neural network model for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

On-Chip Write & Verify and Endurance Enhancer Circuits Towards Multi-level RRAM Array

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Functionally Complete Boolean Logic and Adder Design Based on 2T2R RRAMs for Post-CMOS In-Memory Computing

Nonvolatile Logic and in Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array

Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing

ASAP: an Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits

Efficient Implementation of Boolean and Full-Adder Functions with 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

Logic Circuit and Memory Design for In-Memory Computing Applications Using Bipolar RRAMs

Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

Heterogeneous Instruction Set Architecture for RRAM-enabled In-memory Computing.

A Complementary Resistive Switch-based Crossbar Array Adder

Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

First demonstration of in-memory computing crossbar using multi-level Cell FeFET

Intelligent Computing with RRAM

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

REAL: Logic and Arithmetic Operations Embedded in RRAM for General-Purpose Computing