Abstract:Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ) devices. In parallel with these efforts, the continuous increasing of tunnel magneto-resistance(TMR) ratio of the MTJ inspires the development of multi-level cell (MLC) STT-RAM, which allows multiple data bits be stored in a single memory cell. Two types of MLC STT-RAM cells, namely, parallel MLC and series MLC, were also proposed. The storage margin of a MLC STT-RAM cell, i.e., the distinction between the lowest and highest resistance states, is partitioned into multiple segments for multi-level data representation. As a result, the performance and reliability of MLC STT-RAM cells become more sensitive to the MOS and MTJ device variations and the thermal-induced randomness of MTJ switching. In this work, we systematically analyze the variation sources of MLC STT-RAM designs and their impacts on the reliability of the read and write operations. On top of that, we also discuss the optimal device parameters of the MLC MTJ for the minimization of the operation error rate of the MLC STT-RAM cells from statistical design perspective. Our simulation results show that under the current available technology, series MLC STT-RAM demonstrates overwhelming benefits in the read and write reliability compared to parallel MLC STT-RAM and could potentially satisfy the requirement of commercial practices.

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory.

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References

Low-Power, High-Speed and High-Density Magnetic Non-Volatile SRAM Design with Voltage-Gated Spin-Orbit Torque

A Spin Hall Effect-Based Multi-Level Cell for Mram

DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC Functionality

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Multi-level Cell STT-RAM: is It Realistic or Just a Dream?

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Computing-in-Memory Paradigm Based on STT-MRAM with Synergetic Read/Write-Like Modes

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory.

Magnetic Nonvolatile SRAM Based on Voltage-Gated Spin-Orbit-Torque Magnetic Tunnel Junctions

A Multi-Level Cell for STT-MRAM Realized by Capping Layer Adjustment

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Variation Aware Evaluation Approach and Design Methodology for SOT-MRAM

Low-Energy Shared-Current Write Schemes for Voltage-Controlled Spin-Orbit-Torque Memory

A SOT-MRAM Based CIM Design with Multi-Bit Resistance-Sum Paradigm and Non-Idealities Tuning Mechanism

Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells.

High-Density NAND-Like Spin Transfer Torque Memory with Spin Orbit Torque Erase Operation