Abstract:Silicon-based semiconductor transistors are approaching their physical limits due to shrinking feature sizes. Simultaneously, traditional silicon-based von Neumann architectures exhibit significant latency and power consumption issues in data-centric applications, such as the Internet of Things and artificial intelligence. To tackle these challenges, this study introduces a novel approach: Magnetoresistance Random Access Memory (MRAM) computing in-memory (CIM) using gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET). The proposed MRAM array comprised three transistors and one perpendicular magnetic anisotropy spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) (3T1M) cell and achieves full-array Boolean logic operations and half/full-adder operations. The calculated results can be stored in-situ during the computing phase without requiring additional peripheral circuits. A 16 Kb MRAM was simulated in both GAA-CNTFET/p-SOT-MTJ and 14-nm FinFET/p-SOT-MTJ technologies to examine the effectiveness of the proposed design. Compared to its 14-nm FinFET/p-SOT-MTJ counterparts, the write and computing latencies of the GAA-CNTFET/p-SOT-MTJ CIM macro were reduced by approximately 21% and 20.6%, respectively, while the read and computing energy consumption by approximately 45.3% and 24.7%, respectively. Moreover, the proposed in-memory Boolean logic throughput was 8192 GOPS, which was approximately 160–250 times higher than that of existing CIM solutions, in which only two rows of word lines can be activated.

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

Integration of High-Performance Spin-Orbit Torque MRAM Devices by 200-Mm-wafer Manufacturing Platform

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

High-performance Type-y Spin-orbit Torque MRAM Devices

Experimental Demonstration of Dual-Mode PUF/Memory Based on SOT-MRAM Array

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

High Performance Si-MoS2 Heterogeneous Embedded DRAM

Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

A Novel Cross-Point Mram with Diode Selector Capable of High-Density, High-Speed, and Low-Power In-Memory Computation

A SOT-MRAM Based CIM Design with Multi-Bit Resistance-Sum Paradigm and Non-Idealities Tuning Mechanism

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

Design and Optimization of an Area-efficient SOT-MRAM

Full Reliability Characterization of Three-Terminal SOT-MTJ Devices and Corresponding Arrays

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Uniformity of Device Performance Improvement for the SOT-MRAM by Optimizing the Lithography Process at 200-Mm-wafer Manufacturing Platform

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

A6T-3MSOT-MRAMforin-memorycomputingwith reconfigurable arithmetic operations

Optimization of the 3D multi-level SOT-MRAMs