Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

A Novel Group-Division-Multiplexing Complementary Symmetric Reference Sensing Scheme for MRAM

Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

A New Self-Reference Sensing Scheme For Tlc Mram

A 40nm 150 TOPS/W High Row-Parallel MRAM Compute-in-Memory Macro with Series 3T1MTJ Bitcell for MAC Operation

Data-cell-variation-tolerant triple sampling non-destructive self-reference sensing scheme of STT-MRAM

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

A 1Mb RRAM Macro With 9.8ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation

Low-Energy Shared-Current Write Schemes for Voltage-Controlled Spin-Orbit-Torque Memory

Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

A 0.75 V Reference Clamping Sense Amplifier for Low-Power High-Density ReRAM with Dynamic Pre-Charge Technique

A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier