A 40nm 150 TOPS/W High Row-Parallel MRAM Compute-in-Memory Macro with Series 3T1MTJ Bitcell for MAC Operation

Zizhao Ma,Xianwu Hu,Yihao Wang,Gan Wen,Xiaoyang Zeng,Yufeng Xie

DOI: https://doi.org/10.1109/ISCAS46773.2023.10181405

2023-01-01

Abstract:Non-volatile Compute-in-Memory (CIM), especially high-speed MRAM CIM, promises to be a solution of "Memory Wall" problem in power-sensitive artificial intelligence edge devices. However, the low resistance and low on/off ratio limit the row parallelism and efficiency of MRAM CIM macros. To overcome these challenges, this work proposes the following: 1) a series 3T1MTJ bit- cell CIM architecture; 2) an input-aware and self-generated dynamic reference array; 3) a high-speed readout pipeline circuit. The proposed macro eliminates errors of high Row-Parallel multiply-and-accumulate (MAC) operation with 150 TOPS/W peak energy efficiency simulated using 40nm process and STT-MTJ.