Abstract:Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM) 1 promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by performing AI computation directly within RRAM, thus eliminating power-hungry data movement between separate compute and memory 2,3,4,5 . Although recent studies have demonstrated in-memory matrix-vector multiplication on fully integrated RRAM-CIM hardware 6,7,8,9,10,11,12,13,14,15,16,17 , it remains a goal for a RRAM-CIM chip to simultaneously deliver high energy efficiency, versatility to support diverse models and software-comparable accuracy. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. Here, by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM—a RRAM-based CIM chip that simultaneously delivers versatility in reconfiguring CIM cores for diverse model architectures, energy efficiency that is two-times better than previous state-of-the-art RRAM-CIM chips across various computational bit-precisions, and inference accuracy comparable to software models quantized to four-bit weights across various AI tasks, including accuracy of 99.0 percent on MNIST 18 and 85.7 percent on CIFAR-10 19 image classification, 84.7-percent accuracy on Google speech command recognition 20 , and a 70-percent reduction in image-reconstruction error on a Bayesian image-recovery task.

33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

An 8-Bit in Resistive Memory Computing Core with Regulated Passive Neuron and Bitline Weight Mapping

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

HPSW-CIM: A Novel ReRAM-Based Computingin-Memory Architecture with Constant-Term Circuit for Full Parallel Hybrid-Precision-Signed-Weight MAC Operation

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

A Multiply-Less Approximate SRAM Compute-In-Memory Macro for Neural-Network Inference

A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

7.8 A 22nm Delta-Sigma Computing-In-Memory (Δ∑CIM) SRAM Macro with Near-Zero-Mean Outputs and LSB-First ADCs Achieving 21.38TOPS/W for 8b-MAC Edge AI Processing

A ReRAM-Based Computing-in-Memory Convolutional-Macro with Customized 2T2R Bit-Cell for AIoT Chip IP Applications

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A 28 nm 81 Kb 59–95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

A compute-in-memory chip based on resistive random-access memory

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

TAC-RAM: A 65nm 4kb SRAM Computing-in-Memory Design with 57.55 TOPS/W Supporting Multibit Matrix-Vector Multiplication for Binarized Neural Network.

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

A 28 Nm RRAM-Based 81.1 TOPS/mm2/bit Compute-In-Memory Macro with Uniform and Linear 64 Read Channels under 512 4-Bit Inputs

A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference