Abstract:Non-volatile memory (NVM) based computing-in-memory (CIM) shows significant advantages in handling deep learning tasks for artificial intelligence (AI) applications. To overcome the decreasing cost effectiveness of transistor scaling and the intrinsic inefficiency of data-shuttling in the von-Neumann architecture, CIM is proposed to realize high-speed and low-power system with parallel multiplication accumulation (MAC) computing [1] [2]. However, current demonstrations are mainly based on single macro and present limited computing parallelism. Realizing a fully-integrated CIM chip with a complete neural network model is still missing. The major challenges lie in: (1) The IR drop and transient errors when carrying out MAC operations in non-volatile memory arrays decrease the computing accuracy and further limit the parallelism; (2) The inefficiency of the interface blocks between different arrays due to the power overhead of the A/D and D/A converters (shown in Fig. 33.2.1). To address these challenges, this work proposes: (1) A sign-weighted 2T2R (SW-2T2R) array to reduce IR drop by decreasing the accumulative SL current (ISL), and eventually boost the computing parallelism; (2) a low-power interface design with resolution-adjustable LPAR-ADC to realize flexible tradeoff between system accuracy and power consumption. In this manner, this work implements a fully-integrated 784-100-10 MLP model on an integrated CIM chip with158.8kb analog ReRAMs. This chip realizes high recognition accuracy (94.4%) on MNIST database, high inference speed (77 µs/lmage), and 78.4 TOPS/W peak energy efficiency. The CMOS circuits are fabricated in a 130nm process.

A ReRAM-Based Computing-in-Memory Convolutional-Macro with Customized 2T2R Bit-Cell for AIoT Chip IP Applications

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

An ADC-less RRAM-based Computing-in-Memory Macro with Binary CNN for Efficient Edge AI

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

A high resolution and configurable 1T1R1C ReRAM Macro for Medical Semantic Segmentation

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference

A 578-TOPS/W RRAM-Based Binary Convolutional Neural Network Macro for Tiny AI Edge Devices

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

A 1T2R1C ReRAM CIM Accelerator with Energy-Efficient Voltage Division and Capacitive Coupling for CNN Acceleration in AI Edge Applications.

An 8B-Precison 16-Kb FDSOI 8T SRAM CIM Macro Based on Time-Domain for Energy-Efficient Edge AI Devices

An In-Memory-Computing STT-MRAM Macro with Analog ReLU and Pooling Layers for Ultra-High Efficient Neural Network

A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference

A 28 nm 81 Kb 59–95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

Tempo-CIM: A RRAM Compute-in-Memory Neuromorphic Accelerator with Area-Efficient LIF Neuron and Split-Train-Merged-Inference Algorithm for Edge AI Applications.