Abstract:An efficient dendrite‐function‐like negative‐differential‐resistance (NDR) neuron is proposed for the first time. By co‐integrating electrochemicalrandom‐access memory (ECRAM) and ionic regulation, the non‐ideality of devicesis mitigated and it can also be trained to enhance neural network performancefor edge learning. Finally, the NDR neuron can work synergistically with 1T1R arrays to achieve full hardware implementation of neural networks. Computing‐in‐memory (CIM) architecture inspired by the hierarchy of human brain is proposed to resolve the von Neumann bottleneck and boost acceleration of artificial intelligence. Whereas remarkable progress has been achieved for CIM, making further improvements in CIM performance is becoming increasingly challenging, which is mainly caused by the disparity between rapid evolution of synaptic arrays and relatively slow progress in building efficient neuronal devices. Specifically, dedicated efforts are required toward developments of more advanced activation units in terms of both optimized algorithms and innovative hardware implementations. Here a novel bio‐inspired dendrite function‐like neuron based on negative‐differential‐resistance (NDR) behavior is reported and experimentally demonstrates this design as a more efficient neuron. By integrating electrochemical random‐access memory (ECRAM) with ionic regulation, the tunable NDR neuron can be trained to enhance neural network performances. Furthermore, based on a high‐density RRAM chip, fully hardware implementation of CIM is experimentally demonstrated by integrating NDR neuron devices with only a 1.03% accuracy loss. This work provides 516 × and 1.3 × 105 × improvements on LAE (Latency‐Area‐Energy) property, compared to the digital and analog CMOS activation circuits, respectively. With device‐algorithm co‐optimization, this work proposes a compact and energy‐efficient solution that pushes CIM‐based neuromorphic computing into a new paradigm.

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CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

A 65 Nm 73 Kb SRAM-Based Computing-In-Memory Macro with Dynamic-Sparsity Controlling