Abstract:Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM) 1 promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by performing AI computation directly within RRAM, thus eliminating power-hungry data movement between separate compute and memory 2,3,4,5 . Although recent studies have demonstrated in-memory matrix-vector multiplication on fully integrated RRAM-CIM hardware 6,7,8,9,10,11,12,13,14,15,16,17 , it remains a goal for a RRAM-CIM chip to simultaneously deliver high energy efficiency, versatility to support diverse models and software-comparable accuracy. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. Here, by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM—a RRAM-based CIM chip that simultaneously delivers versatility in reconfiguring CIM cores for diverse model architectures, energy efficiency that is two-times better than previous state-of-the-art RRAM-CIM chips across various computational bit-precisions, and inference accuracy comparable to software models quantized to four-bit weights across various AI tasks, including accuracy of 99.0 percent on MNIST 18 and 85.7 percent on CIFAR-10 19 image classification, 84.7-percent accuracy on Google speech command recognition 20 , and a 70-percent reduction in image-reconstruction error on a Bayesian image-recovery task.

A 28 nm 81 Kb 59–95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

An 8-Bit in Resistive Memory Computing Core with Regulated Passive Neuron and Bitline Weight Mapping

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

A 1T2R1C ReRAM CIM Accelerator with Energy-Efficient Voltage Division and Capacitive Coupling for CNN Acceleration in AI Edge Applications.

A compute-in-memory chip based on resistive random-access memory

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference

A 28-Nm 36 Kb SRAM CIM Engine with 0.173 $\mu $m$^{2}$ 4T1T Cell and Self-Load-0 Weight Update for AI Inference and Training Applications

33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

Tempo-CIM: A RRAM Compute-in-Memory Neuromorphic Accelerator with Area-Efficient LIF Neuron and Split-Train-Merged-Inference Algorithm for Edge AI Applications.

An 8.8 TFLOPS/W Floating-Point RRAM-Based Compute-in-Memory Macro Using Low Latency Triangle-Style Mantissa Multiplication

AFPR-CIM: An Analog-Domain Floating-Point RRAM-based Compute-In-Memory Architecture with Dynamic Range Adaptive FP-ADC

A Heterogeneous Microprocessor for Intermittent AI Inference Using Nonvolatile-SRAM-based Compute-In-Memory

A ReRAM-Based Computing-in-Memory Convolutional-Macro with Customized 2T2R Bit-Cell for AIoT Chip IP Applications

Compute-in-Memory with 6T-RRAM Memristive Circuit for Next-Gen Neuromorphic Hardware

A High-Throughput Energy–Area-Efficient Computing-in-Memory SRAM Using Unified Charge-Processing Network