Abstract:The smart edge nodes require efficient matrix-vector multiplications for local deep neural network (DNN) inference. Benefiting from its high density and CMOS compatibility, the eDRAM-based computing-in-memory (CIM) [1] –[4], especially with multi-level cells (MLCs) [4], attracts rising attention. However, the performance of prior MLCeDRAM CIM is severely limited by the inconsistency of weight representations during the programming and computing: weights are programmed as fixed voltages while transistor currents are used for computation. Thus, the programming of MLCs requires calibration due to the nonlinear transistor I-V, which can be extremely complicated in the presence of $V_{T H}$ variations. Furthermore, the computing precision is severely degraded by $\mathrm{V}_{\mathrm{TH}}$ variations when small computing currents are used for high parallelism. To fundamentally surmolunt this dilemma, we propose the first currentprogramming eDRAM CIM that unifies the weight programming and computing in the current domain. The enabling technique is a novel 3T1C eDRAM cell (Fig. 1, top right). It confers several key merits: 1) the cell is programmed by the weight current directly with the selfcalibrated voltage generated on the storage capacitor; it essentially stores the weight current instead of a fixed voltage, thus mitigating $V_{\text {TH}}$ variation and nonlinear transistor I-V impacts; 2) a dynamiccascoded read structure is proposed to significantly reduce the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</inf> sensitivity while not requiring any bias voltage; 3) thanks to the accurately programmed cell, it supports MLC operation (8 current levels) without any calibration, largely increasing density; 4) a voltage-current two-step programming scheme significantly boosts the sub- $\mu \mathrm{A}$ current-weight writing speed. Combining these merits, the proposed eDRAM cell is naturally immune to transistor-level nonidealities, thus allowing a small LSB weight current of only 100nA. A $4 \mathrm{~b}$ CIM cell composed of 2MLCs is developed to support 4bsigned weights. It contains 15 current levels ranging from -700nA to 700nA. Fabricated in a $65 \mathrm{~nm}$ CMOS, the prototype achieves the highest macro-level 4b-MAC energy efficiency of 233-305TOPS/W among eDRAM CIMs.

Cramming More Weight Data Onto Compute-in-Memory Macros for High Task-Level Energy Efficiency Using Custom ROM with 3984-Kb/mm$^{2}$ Density in 65-Nm CMOS

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

A 28nm 8928Kb/mm 2 -Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM.

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

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A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

A 40nm 150 TOPS/W High Row-Parallel MRAM Compute-in-Memory Macro with Series 3T1MTJ Bitcell for MAC Operation

A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC

An 11T1C Bit-Level-Sparsity-Aware Computing-in-Memory Macro with Adaptive Conversion Time and Computation Voltage

A Computing-in-Memory SRAM Macro Based on Fully-Capacitive-Coupling With Hierarchical Capacity Attenuator for 4-b MAC Operation

An 8.8 TFLOPS/W Floating-Point RRAM-Based Compute-in-Memory Macro Using Low Latency Triangle-Style Mantissa Multiplication

15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

A 4-Bit Calibration-Free Computing-In-Memory Macro with 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell Edram

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors

PICO-RAM: A PVT-Insensitive Analog Compute-In-Memory SRAM Macro with In-Situ Multi-Bit Charge Computing and 6T Thin-Cell-Compatible Layout