Abstract:With decreasing die size and the ability to store multiple bits in a single cell, resistive random access memory (ReRAM) can be used to increase storage density, making it a promising technology for the next generation of memory. However, multi-level write operations suffer from impairments such as large latency, high energy consumption, and reliability issues. In this paper, we study different mechanisms affecting the "multi-level incremental step pulse with verify algorithm" (M-ISPVA) on a 1-transistor-1-resistor (1T1R) model in transient simulation at the component and the circuit level with focus on resistance control and energy consumption during the entire process of state transitions. By dividing the M-ISPVA into a triggering and a controlling period, we discovered the transistor to operate in the ohmic region during the triggering period as a voltage-controlled resistance and in the saturation region during the controlling period as a voltage-controlled current limiter. Controlling the gate voltage in the triggering period can move the triggering point to a desired write voltage and in the controlling period can increase or decrease resistance steps per pulse to attain a desired speed of resistance change. In addition, the major energy portion is consumed for reset operation during triggering and for set operation during the controlling period. To optimize write performance, extra precaution must be taken when defining resistance states with target read-out current and gate voltage with the focus on evenly balanced latencies between all transitions. A direct multi-level write operation shows 67.5 % latency and 62.5 % energy saving compared to indirect ones, but suffers from only unidirectional control, making it non-feasible. In case of a 4 k bit memory, the more reliable M-ISPVA faces almost 37 % higher latency and energy compared to the basic ISPVA.

Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

Performance Prediction of Large-Scale 1S1R Resistive Memory Array Using Machine Learning

Assessing the Performance of Stateful Logic in 1-Selector-1-RRAM Crossbar Arrays

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing

Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device

Access scheme of Multi-Level Cell Spin-Transfer Torque Random Access Memory and its optimization

Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array

Device-Architecture Co-optimization for RRAM-based In-memory Computing.

Optimizing multi-level ReRAM memory for low latency and low energy consumption

DM-IMCA: A Dual-Mode In-Memory Computing Architecture for General Purpose Processing.

ASAP: an Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell

Performance Analysis on Structure of Racetrack Memory

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

On-Chip Write & Verify and Endurance Enhancer Circuits Towards Multi-level RRAM Array