Abstract:In-memory computing has gained significant attention due to the potential for dramatic improvement in speed and energy. Redox-based resistive RAMs (ReRAMs), capable of non-volatile storage and logic operations simultaneously have been used for logic-in-memory computing approaches. To this effect, we propose ReRAM based VLIW Architecture for in-Memory comPuting (ReVAMP), supported by a detailed device-accurate simulation setup with peripheral circuitry. We present theoretical bounds on the minimum area required for in-memory computation of arbitrary Boolean functions specified using structural representation (And-Inverter Graph and Majority-Inverter Graph) and two-level representation (Exclusive-Sum-of-Product). To support the ReVAMP architecture, we present two technology mapping flows that fully exploit the bit-level parallelism offered by the execution of logic using ReRAM crossbar array. The area-constrained mapping (ArC) generates feasible mapping for a variety of crossbar dimensions while the delay-constrained mapping (DeC) focuses primarily on minimizing the latency of mapping. We evaluate the proposed mappings against two state-of-the-art technology in-memory computing architectures, PLiM and MAGIC along with their automation flows (SIMPLE and COMPACT). ArC and DeC outperform state-of-the-art PLiM architecture by $1.46times$<math>1.46×</math> and $4.3times$<math>4.3×-ml:mrow></math> on average in latency. ArC offers significantly lower area (on average $25.27times$<math>25.27×</math> and $6.57times$<math>6.57×</math>), while improving the area-delay product by $1.37times$<math>1.37×</math> and $1.12times$<math>1.12×</math> against two mapping approaches for MAGIC respectively. In contrast, DeC achieves average area ($1.45times$<math>1.45×</math> and $3.06times$

Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory

A Novel Resistive Memory-based Process-in-memory Architecture for Efficient Logic and Add Operations

Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology.

STAR: Synthesis of Stateful Logic in RRAM Targeting High ARea Utilization

SEAL-lab Technical Report – No . 2015-001 ( November 30 , 2015 ) Processing-in-Memory in ReRAM-based Main Memory

SEAL-lab Technical Report – No . 2015-001 ( April 29 , 2016 ) Processing-in-Memory in ReRAM-based Main Memory

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Cross-layer Designs against Non-ideal Effects in ReRAM-based Processing-in-Memory System

Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

Fast and Reconfigurable Logic Synthesis in Memristor Crossbar Array

Parallel Stateful Logic in RRAM: Theoretical Analysis and Arithmetic Design

A Novel Memristor-Reusable Mapping Methodology of In-memory Logic Implementation for High Area-Efficiency

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

Crossbar-Constrained Technology Mapping for ReRAM Based In-Memory Computing

Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

A Novel Parallel In-Memory Logic Array Based on Programmable Diodes

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory