Abstract:RRAM, utilizing ALD, assures efficient and stable resistance switching in sub‐10 nm devices. This review highlights the technological advantages of ALD and delves into the impact of ALD on the microscopic resistive mechanisms, the switching films, and the electrodes. ALD‐driven RRAM is poised to revolutionize information storage and neural networks, offering smaller, faster, and more reliable memory solutions. Resistive random‐access memory (RRAM) stands out as a promising memory technology due to its ease of operation, high speed, affordability, exceptional stability, and potential to enable smaller memory devices with sizes under 10 nm. This has drawn significant attention, with atomic layer deposition (ALD) emerging as an ideal technology to tackle the challenges of nanoscale fabrication in the micro‐ and nanomanufacturing industry. ALD offers technological advantages such as functional multiple‐layer stacking, doping capabilities, and incorporating oxygen reservoirs or reactive layers. These factors contribute to achieving more intriguing, stable, and reliable nonvolatile resistance switching behaviors in RRAM. Specifically, ALD greatly benefits RRAM, that relies on the valence change mechanism, where high‐k transition metal oxides are commonly used as switching materials, and precise control over oxygen vacancies is achievable. This review provides a comprehensive overview of ALD films used in RRAM, delves into resistive switching properties and microscopic mechanisms in binary and ternary oxides and nitrides, and explores the impact of ALD‐prepared electrodes. Furthermore, the current status and future prospects of ALD‐based RRAM are highlighted, which is poised to catalyze further advancements in the fields of information storage and neural networks.

Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

Nonvolatile Logic and in Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

Atomic Layer Deposition Films for Resistive Random‐Access Memories

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

Demonstrate High R-OFF/R-ON Ratio and Forming-Free RRAM for Rfpga Application Based on Switching Layer Engineering

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Atomic Layer Deposition Films for Resistive Random‐Access Memories (Adv. Mater. Technol. 16/2024)

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Application of twin-bit self-rectifying via RRAM with unique diode state in cross-bar arrays by advanced CMOS Cu BEOL process

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

Uniform 3D vertical AlOδ/Ta2O5−x/TaOy RRAM: Fabrication, characterization and mechanism analysis

All-Metal-Nitride RRAM Devices