Abstract:The huge area overhead of the interconnect is one of the critical issues in static random access memory (SRAM)-based field-programmable gate arrays (FPGAs), resulting in high power consumption and slow operation speed. Another critical issue is the volatile feature of the SRAM, which leads to high standby leakage current and long power-ON time. Resistive random access memory (RRAM) with a high resistance ratio and zero standby power possesses great potential in the FPGA applications. The conventional RRAM-based nonvolatile FPGAs (NVFPGAs) may use one-transistor 2-RRAM (1T2R) storage element to replace the SRAM or the one RRAM (1R) cell to replace both nMOS switch and SRAM. However, those NVFPGA schemes may suffer from the issues of low reliability, high configuration power, and high active leakage power. In this paper, we propose a novel element [one-diode two-RRAM (1D2R) cells] to replace the nMOS switch and 6 Transistors (6T) SRAM. Meanwhile, the novel block structures of the logic block, connection block, switch block, and the FPGA architecture based on the 1D2R element are proposed. Compared with the conventional 1T2R-based NVFPGA, our novel structure could improve the operation speed by 53% with a 40.5% lower operation power. Compared with the conventional 1R-based NVFPGA, the proposed scheme could greatly reduce the write error rate by eight orders with more than 20 times lower write power.

Demonstrate High R-OFF/R-ON Ratio and Forming-Free RRAM for Rfpga Application Based on Switching Layer Engineering

High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array with Stacked 1D2R RRAM Array

FPGA Based on Integration of CMOS and RRAM

Rfga: CMOS-nano Hybrid FPGA Using RRAM Components

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

Resistive Switching Behaviours and Novel Device Applications of Metal-Oxide-Si/Ge Structures

Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Novel RRAM Programming Technology for Instant-on and High-Security FPGAs

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

High Performance Unipolar AlOy/HfOx/Ni Based RRAM Compatible with Si Diodes for 3D Application

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiO x (HAT) RRAM

Low-Power, Multilevel And Analog Character'S In The Multi-Layer-Oxide Based Rram Devices Compatible With Cmos Technology

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

3D RRAM: Design and optimization

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.