Abstract:Here we propose a novel encapsulated vertical 3D RRAM structure with each resistive switching cell encapsulated by dielectric layers, contributing to both the reliability improvement of individual cells and thermal disturbance reduction of adjacent cells due to the effective suppression of unwanted oxygen vacancy diffusion. In contrast to the traditional vertical 3D RRAM, encapsulated bar-electrodes are adopted in the proposed structure substituting the previous plane-electrodes, thus encapsulated resistive switching cells can be naturally formed by simply oxidizing the tip of the metal bar-electrodes. In this work, TaO x -based 3D RRAM devices with SiO2 and Si3N4 as encapsulation layers are demonstrated, both showing significant advantages over traditional unencapsulated vertical 3D RRAM. Furthermore, it was found thermal conductivity and oxygen blocking ability are two key parameters of the encapsulation layer design influencing the scalability of vertical 3D RRAM. Experimental and simulation data show that oxygen blocking ability is more critical for encapsulation layers in the relatively large scale, while thermal conductivity becomes dominant as the stacking layers scale to the sub-10 nm regime. Finally, based on the notable impacts of the encapsulation layer on 3D RRAM scaling, an encapsulation material with both excellent oxygen blocking ability and high thermal conductivity such as AlN is suggested to be highly desirable to maximize the advantages of the proposed encapsulated structure. The findings in this work could pave the way for reliable ultrahigh-density storage applications in the big data era.

3D RRAM: Design and optimization

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture

Design And Optimization Methodology For 3d Rram Arrays

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Design guidelines for 3D RRAM cross-point architecture

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current

3D Vertical RRAM Array and Device Co-design with Physics-based Spice Model

Novel Vertical 3D Structure of TaO X -Based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

Encapsulation Layer Design and Scalability in Encapsulated Vertical 3D RRAM.

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array

Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications