Abstract:The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I – V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

Design guidelines for 3D RRAM cross-point architecture

Design And Optimization Methodology For 3d Rram Arrays

3D RRAM: Design and optimization

3D Vertical RRAM Array and Device Co-design with Physics-based Spice Model

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture

Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays

3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array

Experimental Study of Plane Electrode Thickness Scaling for 3d Vertical Resistive Random Access Memory

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage

Design Guidelines of RRAM Based Neural-Processing-Unit

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Resistive Switching Memory for High Density Storage and Computing*

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Efficient Models for Designing GB-level 3-D 1S1R Horizontal-Stacked-rram and Vertical-Rram Arrays

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip