Abstract:NAND flash is the most widely used non-volatile memories due to its low cost and rewritable properties. However, some problems exist in NAND flash that need to be solved, such as low writing and reading speed, high operating voltage, and relatively large cell dimensions. Next generation memories, especially resistive random access memory (RRAM) could improve these problems. The technologies of 3D vertical architecture have made a major breakthrough in establishing high-density memory structures. Combined with an array structure, a 3D high density vertical resistive random access memory (VRRAM) cross-point arrays are able to efficiently increase the device density in vertical direction. In this work, a novel 3D VRRAM arrays which contains two VRRAM cells (Pt/ ZnO/ Al and Pt/ ZnO/ Ti) and one normal layered RRAM (Al/ Al2O3/ Ti) at each cross point were constructed. The Al2O3 based device could operate under a lower compliance current, where contained higher resistance than ZnO based cells. With the controlling of compliance current, the leakage current between VRRAM cells and Al/ Al2O3/ Ti cell could be effectively reduced, therefore, the neighboring cells could be operated independently. We demonstrated the introducing of VRRAM structure could achieve high density advantage in vertical direction, and the adjacent cells in 3D vertical structure could be operated independently with scarcely leakage current. The shrinkage of leakage current enhance the stability of devices and increase the feasibility of high density VRRAM structure applications. Figure 1

Experimental Study of Plane Electrode Thickness Scaling for 3d Vertical Resistive Random Access Memory

3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current

Thermal Effect in Ultra-High Density 3D Vertical and Horizontal RRAM Array

Design And Optimization Methodology For 3d Rram Arrays

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory.

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture

Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array

Stacked 3D RRAM Array with Graphene/CNT As Edge Electrodes

Design guidelines for 3D RRAM cross-point architecture

3D Vertical RRAM Array and Device Co-design with Physics-based Spice Model