3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines
Haitong Li,Bin Gao,Hong-Yu (Henry) Chen,Zhe Chen,Peng Huang,Rui Liu,Liang Zhao,Zizhen (Jane) Jiang,Lifeng Liu,Xiaoyan Liu,Shimeng Yu,Jinfeng Kang,Yoshi Nishi,H. -S. Philip Wong
DOI: https://doi.org/10.1109/ted.2015.2468602
IF: 3.1
2015-01-01
IEEE Transactions on Electron Devices
Abstract:3-D resistive switching random access memory (RRAM) is a promising candidate for high-density nonvolatile memory applications, as well as for monolithic 3-D integration interleaved with logic layers. In this paper, we develop a methodology for assessing and optimizing large-scale 3-D RRAM arrays. A systematic study on the intrinsic switching behaviors and optimization of 3-D RRAM arrays is performed, combining device measurements and 3-D array simulations. The dependence of programming voltage on array size, cell location and pulse parameters, statistical properties of operating 3-D RRAM arrays, and subthreshold disturbance on RRAM cells is experimentally investigated. Optimization guidelines for the performance and reliability of 3-D RRAM arrays from device level to architecture level are presented: 1) an optimized 1/n architecture for 100-kb 3-D RRAM arrays can improve write margin by 69.6% and reduce energy consumption by 75.6% compared with a conventional full-size array design; 2) a strategy of prioritizing storage location for reliable operation is presented; and 3) an optimal hopping barrier of oxygen ions is found to improve array immunity to disturbance.