Abstract:The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I – V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays

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3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

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Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array

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Thermal Effect on Endurance Performance of 3-Dimensional Rram Crossbar Array

3D Vertical RRAM Array and Device Co-design with Physics-based Spice Model

Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Resistive Switching Memory for High Density Storage and Computing*

Novel Vertical 3D Structure of TaO X -Based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation