Abstract:Complementary resistive switching (CRS) is a suitable approach to minimize the sneak leakage paths through a large resistive random access memory (RRAM) array. Here, an effective CRS design with a HfO2/Al2O3/TiOx (HAT) trilayer structure integrated in a 3D vertically stacked RRAM array is reported. The design shows voltage-controlled resistive switching and CRS performance with multilevel operations. High-speed switching is observed with the HAT design. The device shows SET and the RESET transitions with speeds of -3.5 V@30 ns and +3.8 V@ 150 ns, respectively. As well as with the DC measurements, the CRS switching is achieved under AC switching dynamics measurement. Maintaining the same applied pulse polarity, the lower amplitude can switch the device to the SET and the higher amplitude can switch it to the RESET. A highly nonlinear (nonlinearity >10(2)) CRS is obtained at a high temperature of 150 degrees C. In the HAT devices, the origin of CRS is due to the anionic redistribution in HfO2 and TiOx layers, leaving Al2O3 as tunnel barrier. The achievements reported here indicate the applicability of the HAT design for future high-speed high-density applications.

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture

3D RRAM: Design and optimization

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

Fully CMOS Compatible 3D Vertical RRAM with Self-Aligned Self-Selective Cell Enabling Sub-5Nm Scaling

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Design guidelines for 3D RRAM cross-point architecture

Novel Vertical 3D Structure of TaO X -Based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

High Performance Unipolar AlOy/HfOx/Ni Based RRAM Compatible with Si Diodes for 3D Application

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiO x (HAT) RRAM

Design And Optimization Methodology For 3d Rram Arrays

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Experimental Study of Plane Electrode Thickness Scaling for 3d Vertical Resistive Random Access Memory

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

Experimental Investigation Of The Scalability Of Rram Device With Pt/[Hfox/Aloy](M)/Tin Structure

Uniform 3D vertical AlOδ/Ta2O5−x/TaOy RRAM: Fabrication, characterization and mechanism analysis

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM