All-Metal-Nitride RRAM Devices

Zhiping Zhang,Bin Gao,Zheng Fang,Xinpeng Wang,Yanzhe Tang,Joon Sohn,H. -S. Philip Wong,S. Simon Wong,Guo-Qiang Lo
DOI: https://doi.org/10.1109/led.2014.2367542
IF: 4.8157
2015-01-01
IEEE Electron Device Letters
Abstract:This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current <;100 μA, retention of > 3×105 s at 150 °C, and ac endurance of up to 105 Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.
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