Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

Application of twin-bit self-rectifying via RRAM with unique diode state in cross-bar arrays by advanced CMOS Cu BEOL process

A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications.

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Progress in Rectifying-Based RRAM Passive Crossbar Array

Oxide based two diodes–one resistor structure for bipolar RRAM crossbar array

Excellent Nonlinearity of A Selection Device Based on Anti-Series Connected Zener Diodes for Ultrahigh-Density Bipolar Rram Arrays

Rectifying Characteristics and Implementation of N-Si/hfo2 Based Devices for 1D1r-Based Cross-Bar Memory Array

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Bipolar One Diode–one Resistor Integration for High-Density Resistive Memory Applications

Feasibility Study of Using A Zener Diode As the Selection Device for Bipolar Rram and Worm Memory Arrays

A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

A Self-Terminated Operation Scheme for High-Parallel and Energy-Efficient Forming of RRAM Array

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Very Low-Programming-Current RRAM with Self-Rectifying Characteristics

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

Read Operation Performance of Large Selectorless Cross-Point Array with Self-Rectifying Memristive Device

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application

BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond