Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.
Qing Luo,Xiaoxin Xu,Hongtao Liu,Hangbing Lv,Tiancheng Gong,Shibing Long,Qi Liu,Haitao Sun,Writam Banerjee,Ling Li,Jianfeng Gao,Nianduan Lu,Ming Liu
DOI: https://doi.org/10.1039/c6nr02029a
IF: 6.7
2016-01-01
Nanoscale
Abstract:Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>10(3)) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.