Abstract:This work reports a prototypical implementation of in‐memory analog mathematical operations based on spin‐orbit torque devices. Several orders smaller area overhead and comparable power consumption are obtained compared to the complementary metal oxide semiconductor counterparts, but the data can be locally stored in the configuration. Edge detection and amplitude modulation are experimentally demonstrated while pattern recognition is simulated. Analog arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI). In‐memory computing (IMC) offers a high performance and energy‐efficient computing paradigm. To date, in‐memory analog arithmetic operations with emerging nonvolatile devices are usually implemented using discrete components, which limits the scalability and blocks large scale integration. Here, a prototypical implementation of in‐memory analog arithmetic operations (summation, subtraction and multiplication) is experimentally demonstrated, based on in‐memory electrical current sensing units using spin‐orbit torque (SOT) devices. The proposed structures for analog arithmetic operations are smaller than the state‐of‐the‐art complementary metal oxide semiconductor (CMOS) counterparts by several orders of magnitude. Moreover, data to be processed and computing results can be locally stored, or the analog computing can be done in the nonvolatile SOT devices, which are exploited to experimentally implement the image edge detection and signal amplitude modulation with a simple structure. Furthermore, an artificial neural network (ANN) with SOT devices based synapses is constructed to realize pattern recognition with high accuracy of ≈95%.

Exploring a SOT-MRAM Based In-Memory Computing for Data Processing.

Exploring STT-MRAM Based In-Memory Computing Paradigm with Application of Image Edge Extraction

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

Reconfigurable Processing in Memory Architecture Based on Spin Orbit Torque

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

In-Memory Computing with Spintronic Devices

An STT-MRAM Based in Memory Architecture for Low Power Integral Computing

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

Computing-in-Memory Architecture based on Field-Free SOT-MRAM with Self-Reference Method

A CFMB STT-MRAM-Based Computing-in-Memory Proposal with Cascade Computing Unit for Edge AI Devices

Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

14.2 A Compute SRAM with Bit-Serial Integer/Floating-Point Operations for Programmable In-Memory Vector Acceleration

Leveraging Spintronic Devices for Ultra-Low Power In-Memory Computing: Logic and Neural Network.

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Enabling Normally-off In-Situ Computing with a Magneto-Electric FET-based SRAM Design

An STT-MRAM Based Reconfigurable Computing-in-memory Architecture for General Purpose Computing

In-memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

Design of an Area-Efficient Computing in Memory Platform Based on STT-MRAM