Solid-Ionic Memory in a van der Waals Heterostructure
Jieqiong Chen,Rui Guo,Xiaowei Wang,Chao Zhu,Guiming Cao,Lu You,Ruihuan Duan,Chao Zhu,Shreyash Sudhakar Hadke,Xun Cao,Teddy Salim,Pio John S. Buenconsejo,Manzhang Xu,Xiaoxu Zhao,Jiadong Zhou,Ya Deng,Qingsheng Zeng,Lydia H. Wong,Jingsheng Chen,Fucai Liu,Zheng Liu
DOI: https://doi.org/10.1021/acsnano.1c05841
IF: 17.1
2022-01-09
ACS Nano
Abstract:Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS<sub>2</sub>/BiFeO<sub>3</sub>/SrTiO<sub>3</sub> van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 10<sup>6</sup> (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 10<sup>4</sup> A/W) and photodetectivity (2.12 × 10<sup>13</sup> Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology