Abstract:Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

Research on Circuit Design Techniques for 1 kbit Ferroelectric Random Access Memory

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Design of a 4 k Bit Ferroelectric Memory

A Novel Circuit Scheme And Analysis For Three-Level Feram

Reference Voltage Generation Scheme Enhancing Speed and Reliability for 1t1c‐type FRAM

A Fast Bitline Capacitance Evaluation Method for Designing Ferroelectric Random Access Memory

Key Technologies for Feram Backend Module

Design Space Exploration of FeRAM Bit Cell for DRAM Application

Model and key fabrication technologies for FeRAM

Novel Multilevel Non-Destructive-Read-Out (ndro) Ferroelectric Floating-Gate Random Access Memory (Ffram)

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

High-speed and Low-Power Feram Utilising Merged BL/PL Array Architecture with Twin-Bitline-driven Scheme

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

A ferroelectric fin diode for robust non-volatile memory

Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM with Hafnia-Based Ferroelectric Capacitors

Nonvolatile Memory Design Based on Ferroelectric FETs.

Realization of a Noncontact IC Chip with Embedded Ferroelectric Memory in an Auxiliary Timing Device for Sports Games

FeRAM: A Paradigm of Advanced Data Storage Technology

Progress in Development of Resistive RAM Peripheral Circuit

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell