Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

Min Liao,Hao Xu,Jiahui Duan,Shujing Zhao,Fengbin Tian,Junshuai Chai,Kai Han,Yibo Jiang,Jinjuan Xiang,Wenwu Wang,Xiaolei Wang

DOI: https://doi.org/10.1109/ted.2023.3285715

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:We investigate the impact of saturated spontaneous polarization ( ${P}_{\text {s}}{)}$ of the ferroelectric on endurance fatigue of Si FeFET with Metal/Ferroelectric/Interlayer/Si (MFIS) gate structure. We tune the ${P}_{\text {s}}$ in the range of 25.9– $6.4 \mu \text{C}$ /cm2 by changing the gate structure, such as the insertion of a dielectric layer and annealing temperature. When the ${P}_{\text {s}}$ decreases from 12.1 to $6.4 \mu \text{C}$ /cm2, the memory window of the device decreases while the endurance improves. When the ${P}_{\text {s}}$ decreases from 12.1 to $8.1 \mu \text{C}$ /cm2, the memory window disappears. However, when the ${P}_{\text {s}}$ is lower than $8.1 \mu \text{C}$ /cm2, the memory window reappears. Smaller ${P}_{\text {s}}$ leads to a smaller memory window, which reduces the read noise margin of the memory and is disadvantageous to endurance. Whereas smaller ${P}_{\text {s}}$ leads to weaker charge trapping behavior, which is advantageous to endurance. Our work shows that the endurance characteristic is determined by the competition between the above two processes.

engineering, electrical & electronic,physics, applied