Endurance Improvement of HfO $_{\text{2}}$ -Based FeFETs on FDSOI Platform by Al $_{\text{2}}$ O $_{\text{3}}$ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies

Yuan Wang,Yuanquan Huang,Hongye Yuan,Bowen Nie,Shuxian Lv,Pengfei Jiang,Wei,Yang,Tiancheng Gong,Qing Luo

DOI: https://doi.org/10.1109/ted.2024.3480035

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, the endurance of HfO $_{\text{2}}$ -based ferroelectric-gate field-effect transistors (FeFETs) on fully depleted silicon-on-insulator (FD-SOI) platform is improved by Al $_{\text{2}}$ O $_{\text{3}}$ insertion layer and optimized recovery strategies. First, due to the suppression of the hole trapping caused by the larger $\Delta \textit{E}_{\text{V}}$ of Al $_{\text{2}}$ O $_{\text{3}}$ , the trend of memory window (MW) degradation is slowed down. Furthermore, through the systematical investigation of the MW degradation, it is found that the recover pulse should be applied before the generation of interfacial traps to prevent the damage of the recover pulse to the device itself. Compared with the conventional recover methods, the combination of Al $_{\text{2}}$ O $_{\text{3}}$ insertion layer and optimized recover pulses exhibits great advantages in improving the endurance of FeFETs, and significant endurance improvement is finally achieved.