Abstract:Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device technologies with specially engineered properties are under intense investigation to revolutionize information processing with brain-inspired computing primitives for ultra energy-efficient implementation of AI and machine learning tasks. Ferroelectric memories with ultra-low power and fast operation, non-volatile data retention and reliable switching to multiple polarization states promises one such option for non-volatile memory and synaptic weight elements in neuromorphic hardware. For quick adaptation of industry, new materials need complementary metal oxide semiconductor (CMOS) process compatibility which brings a whole new set of challenges and opportunities for advanced materials design. In this work, we report on designing of back-end-of-line compatible ferroelectric Hf0.5Zr0.5O2 capacitors that are capable of recovery from fatigue multiple times reaching 2Pr > 40 microC cm-2 upon each retrieval. Our results indicate that with specifically engineered material stack and annealing protocols, it is possible to reach endurance exceeding 10^9 cycles at room temperature that can lead to ultralow power ferroelectric non-volatile memory components or synaptic weight elements compatible with online training or inference tasks for neuromorphic computing.

Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit Design

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

Endurance Improvement of HfO $_{\text{2}}$ -Based FeFETs on FDSOI Platform by Al $_{\text{2}}$ O $_{\text{3}}$ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies

Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

A Novel High-Endurance FeFET Memory Device Based on ZrO 2 Anti-Ferroelectric and IGZO Channel

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

A Reliable 2 Bit MLC FeFET with High Uniformity and 109 Endurance by Gate Stack and Write Pulse Co-optimization

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement