Abstract:Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells reduces the measurable polarization charge proportional to the capacitor area, and data are no longer detected reliably in high-density memories. The nondestructive readout of the binary information is possible from the high- and low-conductance bipolar switching of a ferroelectric diode under two opposite poling fields, where the direction of the diode effect switches with polarization reversal. Our study of BiFeO3 thin-film capacitors shows measured polarization-modulated diode currents for encoding information within high-density memories. We used two in-plane nano-electrodes fabricated on the film surface in gaps of a few tens of nanometers. As an in-plane field is applied antiparallel to the domain orientation above a coercive field, the partial domains near the film surface layer are switched firstly to form conductive charged walls with respect to the underlying unswitched bulk matrix, so that we can observed an "on" current from current-voltage loops. As the switching field is high enough, the underlying domains throughout the whole film thickness are switched. In this case, there was no charged domain wall, and thus, we observed an "off' current. Both "on" and "off' currents with the ratio of 100 are stable over laboratory time with write cycles larger than 2x10(5) and write time as short as 10 ns, which provide the proof of ferro-resistive switching and independent adjustments of ferroelectricity and conductivity in a single-phase ferroelectric in promotion of the integration density of the memory with high performance.

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

High-Desity Nonvolatile Ferroelectric Resisitive Memory

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme with Disturb-Free Inference and High Endurance

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

Improved Memory Density and Endurance by a Novel 1T3C FeFET for BEOL Multi-level Cell Memory

Organic Nonvolatile 2T Memory Cell Employing a NOT‐Gate‐Like Architecture Toward Binary Output Level With Enhanced Noise Tolerance

A Low Power 4T2C Nvsram with Dynamic Current Compensation Operation Scheme

Nonvolatile Memory Design Based on Ferroelectric FETs.

A 9mb HZO-Based Embedded FeRAM with 10-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>10 12 ) for FeRAM Applications

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors