Abstract:This work reports a brand‐new voltage‐readable 2T memory cell employing a NOT‐gate‐like architecture. It combines ferroelectric and nano‐floating‐gate transistors in a voltage divider, achieving high noise tolerance for voltage output memory. Moreover, the conceptual design of the 1T2T FeRAM cell is also developed as a prospect for low‐cost voltage‐readable memory technology in wearable electronic applications. Organic nonvolatile memory has been considered a low‐cost memory technology for flexible electronics and Internet‐of‐things (IoT). However, a major concern is the nonuniformity of memory units, which is primarily caused by random grain boundaries, interface defects, and charge traps, making it difficult to develop high‐density reliable memory arrays. This nonuniformity problem would induce read error, which is directly caused by the narrow distribution margin of memory states and low noise tolerance in conventional organic memory cells. To break this limitation, a novel 2T memory cell employing a NOT‐gate‐like architecture achieving self‐enhancing noise tolerance is presented. This unique cell consists of a pair of commonly‐gated memory transistors with contradictory "write‐and‐erase" features. It functions as a voltage divider, producing a well‐distinguished binary voltage output capability. The concept and design model of this brand‐new 2T memory cell is thoroughly discussed. It is originally characterized by noise‐tolerant memory cells irrespective of device nonuniformity. The noise tolerance range of this 2T memory cell is also investigated. The binary voltage‐readable memory state with a large noise tolerance range is obtained. Moreover, the conceptual design of the 1T2T FeRAM cell is further developed for low‐cost voltage‐readable memory technology in wearable electronic applications.

A Low Power 4T2C Nvsram with Dynamic Current Compensation Operation Scheme

A HfO 2 Ferroelectric Capacitor Based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM with Hafnia-Based Ferroelectric Capacitors

Highly Area-Efficient Low-Power SRAM Cell with 2 Transistors and 2 Resistors

A Highly Reliable and Low-Power Cross-Coupled 18T SRAM Cell

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Organic Nonvolatile 2T Memory Cell Employing a NOT‐Gate‐Like Architecture Toward Binary Output Level With Enhanced Noise Tolerance

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

Simulations of single event effects in 6T2C-based ferroelectric non-volatile static random access memory

Reverse Bias Current Eliminated, Read-Separated, and Write-Enhanced Tunnel FET SRAM

A Novel Hybrid Nonvolatile SRAM for Suppressing Leakage Power Using Tunnel FET

Half-Select Disturb-Free 10T Tunnel FET SRAM Cell with Improved Noise Margin and Low Power Consumption

A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs

A Low Standby-Power Fast Carbon Nanotube Ternary SRAM Cell with Improved Stability