Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K.-Y. Hsiang,F.-S. Chang,Z.-F. Lou,A. Aich,A. Senapati,J.-Y. Lee,Z.-X. Li,J.-H. Chen,C.-H. Liu,C. W. Liu,S. Maikap,P. Su,T.-H. Hou,M. H. Lee
DOI: https://doi.org/10.1109/ted.2024.3364116
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:Asymmetric field cycling recovery (AFCR) with alternating opposite low ${E}$ -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to $10^{{12}}$ switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of $\Delta 2{P}_{\text {r}}$ toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.
engineering, electrical & electronic,physics, applied
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