Abstract:Driven by the explosive development of data-centric computation applications, it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an arrangement of separated logic and memory components. The transistor-type solid-state non-volatile memories, such as ferroelectric field-effect transistors (FeFETs), have long been regarded as a competitive candidate for future in-memory computing architectures. However, the density scaling towards high-density arrays would require advanced FeFETs with reduced footprints, which remains a great challenge so far. Here, a vertical-transport (VT) FeFET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a van der Waals (vdW) heterojunction channel are vertically integrated, effectively reducing the device footprints. The proposed VT-FeFET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An artificial neural network with supervised learning was simulated based on the device conductance switching properties, showing excellent classification accuracy for the MNIST handwritten digits. These findings suggest that the proposed VT-FeFET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

A Novel Single-Fet Cell And Array Architecture For Ferroelectric Nonvolatile Memories

A Novel Cell and Array Architecture for Fet-Type Ferroelectric Nonvolatile Memories

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Nonvolatile Ferroelectric Field-Effect Transistors.

A ferroelectric fin diode for robust non-volatile memory

Nonvolatile Memory Design Based on Ferroelectric FETs.

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Ferroelectric Memory Based on Nanostructures

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Organic Ferroelectric/semiconducting Nanowire Hybrid Layer for Memory Storage.

Regular Arrays of Highly Ordered Ferroelectric Polymer Nanostructures for Non-Volatile Low-Voltage Memories.

HfO 2 -based Junctionless FeFET Array on FDSOI Platform for NAND Memory Application

A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

Novel Multilevel Non-Destructive-Read-Out (ndro) Ferroelectric Floating-Gate Random Access Memory (Ffram)

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

Field-Effect Memory Transistors Based on Arrays of Nanowires of A Ferroelectric Polymer

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory