Abstract:The rapid developments of big data, the internet of things, and artificial intelligence have put forward more and more requirements for memory chips, logic chips and other electronic components. This study introduces the ferroelectric origin of HfO 2 -based ferroelectric film and explains how element doping, defects, stresses,surfaces and interfaces, regulate and enhance the ferroelectric polarization of the film. It is widely accepted that the ferroelectricity of HfO 2 -based ferroelectric film originates from the metastable tetragonal phase. The ferroelectricity of the HfO 2 -based film can be enhanced by doping some elements such as Zr, Si, Al, Gd, La, and Ta, thereby affecting the crystal structure symmetry. The introduction of an appropriate number of oxygen vacancy defects can reduce the potential barrier of phase transition between the tetragonal phase and the monoclinic phase, making the monoclinic phase easy to transition to tetragonal ferroelectric phase. The stability of the ferroelectric phase can be improved by some methods, including forming the stress between the substrate and electrode, reducing the film thickness, constructing a nanolayered structure, and reducing the annealing temperature. Compared with perovskite oxide ferroelectric thin films, HfO 2 -based films have the advantages of good complementary-metal-oxide-semiconductor compatibility and strong ferroelectricity at nanometer thickness, so they are expected to be used in ferroelectric memory. The HfO 2 -based 1T1C memory has the advantages of fast reading and writing speed, more than reading and writing 10 12 times, and high storage density, and it is the fast reading and writing speed that the only commercial ferroelectric memory possesses at present. The 1T ferroelectric field effect transistor memory has the advantages of non-destructive reading and high storage density. Theoretically, these memories can achieve the same storage density as flash memory, more than reading 10 10 times, the fast reading/writing speed, low operating voltage, and low power consumption,simultaneously. Besides, ferroelectric negative capacitance transistor can obtain a subthreshold swing lower than 60 mV/dec, which greatly reduces the power consumption of integrated circuits and provides an excellent solution for further reducing the size of transistors. Ferroelectric tunnel junction has the advantages of small size and easy integration since the tunneling current can be largely adjusted through ferroelectric polarization switching. In addition, the HfO 2 -based field effect transistors can be used to simulate biological synapses for applications in neural morphology calculations. Moreover, the HfO 2 -based films also have broad application prospects in antiferroelectric energy storage, capacitor dielectric energy storage, memristor, piezoelectric, and pyroelectric devices, etc. Finally, the current challenges and future opportunities of the HfO 2 -based thin films and devices are analyzed.

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

2-Bit/cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Compatibility of HfN Metal Gate Electrodes with Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Structure,performance Regulation and Typical Device Applications of HfO2-based Ferroelectric Films

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Freely Switching Between Ferroelectric and Resistive Switching in Hf0.5Zr0.5O2 Films and Its Application on High Accuracy On-Chip Deep Neural Networks

Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Tunnel Junction Memristor

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films