High-Speed Switching and Giant Electroresistance in an Epitaxial Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Tunnel Junction Memristor

Xinzhe Du,Haoyang Sun,He Wang,Jiachen Li,Yuewei Yin,Xiaoguang Li
DOI: https://doi.org/10.1021/acsami.1c18165
2021-12-27
Abstract:HfO<sub>2</sub>-based ferroelectric materials are good candidates for constructing next-generation nonvolatile memories and high-performance electronic synapses and have attracted extensive attention from both academia and industry. Here, a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric tunnel junction (FTJ) memristor is successfully fabricated by epitaxially growing a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film on a 0.7 wt % Nb-doped SrTiO<sub>3</sub> (001) substrate with a buffer layer of La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub> (∼1 u.c.). The FTJ shows a high switching speed of 20 ns, a giant electroresistance ratio of ∼834, and multiple states (eight states or three bits) with good retention &gt;10<sup>4</sup> s. As a solid synaptic device, tunable synapse functions have also been obtained, including long-term potentiation, long-term depression, and spike-timing-dependent plasticity. These results highlight the promising applications of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based FTJ in ultrafast-speed and high-density nonvolatile memories and artificial synapses.
materials science, multidisciplinary,nanoscience & nanotechnology
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