Abstract:The impact of the arrangement of HfO2 dielectric layers in Hf0.5Zr0.5O2‐based ferroelectric tunnel junctions is systematically analyzed. Furthermore, the reservoir computing system is implemented by using the MFIS‐structured FTJ, which has better performance, as a reservoir layer, and the accuracy of pattern recognition is evaluated. The use of Hf0.5Zr0.5O2 (HZO) films within hafnia‐based ferroelectric tunnel junctions (FTJ) presents a promising avenue for next‐generation non‐volatile memory devices. HZO exhibits excellent ferroelectric properties, ultra‐thinness, low power consumption, nondestructive readout, and compatibility with silicon devices. In this study, Mo/HZO/n+ Si devices are investigated, incorporating a 1 nm HfO2 dielectric layer at the top and bottom of the HZO ferroelectric layer. Comparing the FTJ device configurations, it is observed that the metal‐ferroelectric‐dielectric‐semiconductor (MFIS) outperforms the metal‐dielectric‐ferroelectric‐semiconductor (MIFS) in terms of ferroelectricity, displaying a high 2Pr value of ≈69 μC cm−2. Additionally, MFIS exhibits lower leakage current, higher tunneling electro‐resistance ratio, and a thin dead layer during short pulse switching, as confirmed through DC double sweeping of I−V characteristics. The modified half‐bias scheme demonstrates a maximum array size of 191 for MFIS, showcasing its superior performance over MIFS. Synaptic characteristics, including potentiation, depression, paired‐pulse facilitation, spike‐rate‐dependent plasticity, and excitatory postsynaptic current, are measured using MFIS, highlighting its outstanding ferroelectric properties. As a physical reservoir, the FTJ device implements 16 states of 4 bits in reservoir computing. Finally, pattern recognition using a deep learning neural network achieves high accuracy with using the Modified National Institute of Standards and Technology dataset.

HfZrO<sub>x</sub>-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

Hafnium-Based Ferroelectric Memory Device with Integrated Selective Function Using Crested Band Structure

Electrostatic Characteristics Analysis of Ferroelectric Tunneling Junctions with Different Structures.

Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> barrier

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Giant Electroresistance in Hafnia-Based Ferroelectric Tunnel Junctions Via Enhanced Polarization

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions With Amorphous WO x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Tunnel Junction Memristor

Impact of HfO2 Dielectric Layer Placement in Hf0.5Zr0.5O2‐Based Ferroelectric Tunnel Junctions for Neuromorphic Applications

Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Performance Improvement of Hf0.5Zr0.5O2 Based Ferroelectric-Field-Effect Transistors with ZrO2 seed layers

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction Memristor

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors with ZrO2 Seed Layers

Enhancing Ferroelectric Performance in Hafnia-Based MFIS Capacitor Through Interface Passivation and Bulk Doping.